| No. | Partie # | Fabricant | Description | Fiche Technique |
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KD |
SMALL SIGNAL SCHOTTKY DIODE ● Metal-on-silicon junction, majority carrier conduction ● High current capability, Low forward voltage drop ● Extremely low reverse current Ir ● Ultra speed switching characteristics ● Small temperature coefficient of forward characteristics ● Satis |
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KD |
SMALL SIGNAL SCHOTTKY DIODE ● Metal-on-silicon junction, majority carrier conduction ● High current capability, Low forward voltage drop ● Extremely low reverse current Ir ● Ultra speed switching characteristics ● Small temperature coefficient of forward characteristics ● Satis |
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K&D Technology |
LCD 2 General Specifications 3 Outline Dimension 4 Electrical Specifications 5 Optical Specifications 6 Reliability Test 7 Handling Precautions 8 Precaution for use 9 Package Drawing 10 Label Drawing 11 HSF Requirements 12 Scope |
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Silan Microelectronics |
600V DP MOS POWER TRANSISTOR 11A,600V, RDS(on)(typ.)=0.3@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability ORDERING INFORMATION Part No. SVS11N60DD2TR SVS11N60FD2 SVS11 |
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