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K4021 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
2SK4021

Toshiba Semiconductor
N-Channel MOSFET
te 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 2.3 ± 0.2 5.7 3 JEDEC JEITA TOSHIBA ⎯ ⎯ 2-7J2B Note: Using continuously under heavy loads (e.g. the application of high temperature/curren
Datasheet
2
K4021

Toshiba Semiconductor
2SK4021
ent Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range IAR EAR Tch Tstg 4.5 2.0 150 −55 to 150 A mJ °C °C JEDEC JEITA TOSHIBA ⎯ ⎯ 2-7J2B Note: Using continuously under heavy loads (e.g. the application of high W
Datasheet
3
KK4021B

KODENSHI KOREA
8-Bit Shift Register High-Voltage Silicon-Gate CMOS
nput current of 1 µA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C
• Noise margin (over full package temperature range): 1.0 V min @ 5.0 V supply 2.0 V min @ 10.0 V supply 2.5 V min @ 15.0 V supply ORDERING INFORMATION KK4021B
Datasheet
4
STK4021

ETC
(STK4023 / STK4025) 6.5 TO 25E MIN AF POWER AMP
Datasheet



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