No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
Toshiba Semiconductor |
N-Channel MOSFET te 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 2.3 ± 0.2 5.7 3 JEDEC JEITA TOSHIBA ⎯ ⎯ 2-7J2B Note: Using continuously under heavy loads (e.g. the application of high temperature/curren |
|
|
|
Toshiba Semiconductor |
2SK4021 ent Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range IAR EAR Tch Tstg 4.5 2.0 150 −55 to 150 A mJ °C °C JEDEC JEITA TOSHIBA ⎯ ⎯ 2-7J2B Note: Using continuously under heavy loads (e.g. the application of high W |
|
|
|
KODENSHI KOREA |
8-Bit Shift Register High-Voltage Silicon-Gate CMOS nput current of 1 µA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C • Noise margin (over full package temperature range): 1.0 V min @ 5.0 V supply 2.0 V min @ 10.0 V supply 2.5 V min @ 15.0 V supply ORDERING INFORMATION KK4021B |
|
|
|
ETC |
(STK4023 / STK4025) 6.5 TO 25E MIN AF POWER AMP |
|