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Jiangsu Changjiang Electronics |
TRANSISTOR Power dissipation PCM : 1.25 W£¨ Tamb=25¡æ£© Collector current www.DataSheet4U.com ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡ |
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Jiangsu Changjiang Electronics |
TRANSISTOR Power dissipation PCM : 2 W£¨ Tamb=25¡æ£© Collector current www.DataSheet4U.com ICM: 8 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Para |
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Jiangsu Changjiang Electronics |
TRANSISTOR TRANSISTOR ( NPN ) TO-220 1. BASE 2. COLLECTOR 3. EMITTER · power switching applications www.DataSheet4U.com MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Vo |
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Jiangsu Changjiang |
TRANSISTOR Power dissipation PCM: Collector current ICM: 900 TRANSISTOR (NPN) TO-92 1. EMITTER mW (Tamb=25℃) 2. COLLECTOR 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range TJ, T |
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Jiangsu Changjiang |
TRANSISTOR Power dissipation PCM: Collector current ICM: 900 TRANSISTOR (NPN) TO-92 1. EMITTER mW (Tamb=25℃) 2. COLLECTOR 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range TJ, T |
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JIANGSU CHANGJIANG |
NPN Transistor · power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissip |
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Jiangsu Changjiang Electronics |
TRANSISTOR Power dissipation www.DataSheet4U.com PCM : 1.5 W£¨ Tamb=25¡æ£© Collector current ICM: 4A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Par |
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