| No. | Partie # | Fabricant | Description | Fiche Technique |
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JIEJIE |
Zener Diodes Silicon power zener diodes. Low zener impedance. 2500mW rating on FR-4 or FR-5 board. Voltage range includes breakdown voltages from 6.8V to 200V with ± 5 % for SMAZPC series. Low profile surface-mount package. Zener and surge current s |
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JIEJIE |
Small Signal PNP Transistor Complementary to S8050. Power dissipation of 300mW. High stability and high reliability. MECHANICAL DATA: SOT-23 small outline plastic package Epoxy UL: 94V-0 Mounting position: Any Marking:2TY ABSOLUTE MAXIMUM RATINGS(TA=25℃,unl |
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JIEJIE |
400W Transient Voltage Suppressor Low profile package. Low inductance. Excellent clamping capability. 400W peak pulse power capability at 10×1000μs waveform. Typical IR less than 1μA above 11V. Fast response time: typically less than 1.0ps from 0V to VBR min. High te |
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JIEJIE |
400W Transient Voltage Suppressor Low profile package. Low inductance. Excellent clamping capability. 400W peak pulse power capability at 10×1000μs waveform. Typical IR less than 1μA above 11V. Fast response time: typically less than 1.0ps from 0V to VBR min. High te |
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JIEJIE |
400W Transient Voltage Suppressor Low profile package. Low inductance. Excellent clamping capability. 400W peak pulse power capability at 10×1000μs waveform. Typical IR less than 1μA above 11V. Fast response time: typically less than 1.0ps from 0V to VBR min. High te |
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JIEJIE |
400W Transient Voltage Suppressor Low profile package. Low inductance. Excellent clamping capability. 400W peak pulse power capability at 10×1000μs waveform. Typical IR less than 1μA above 11V. Fast response time: typically less than 1.0ps from 0V to VBR min. High te |
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JIEJIE |
400W Transient Voltage Suppressor Low profile package. Low inductance. Excellent clamping capability. 400W peak pulse power capability at 10×1000μs waveform. Typical IR less than 1μA above 11V. Fast response time: typically less than 1.0ps from 0V to VBR min. High te |
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JIEJIE |
400W Transient Voltage Suppressor Low profile package. Low inductance. Excellent clamping capability. 400W peak pulse power capability at 10×1000μs waveform. Typical IR less than 1μA above 11V. Fast response time: typically less than 1.0ps from 0V to VBR min. High te |
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JIEJIE |
400W Transient Voltage Suppressor Low profile package. Low inductance. Excellent clamping capability. 400W peak pulse power capability at 10×1000μs waveform. Typical IR less than 1μA above 11V. Fast response time: typically less than 1.0ps from 0V to VBR min. High te |
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JIEJIE |
400W Transient Voltage Suppressor Low profile package. Low inductance. Excellent clamping capability. 400W peak pulse power capability at 10×1000μs waveform. Typical IR less than 1μA above 11V. Fast response time: typically less than 1.0ps from 0V to VBR min. High te |
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JIEJIE |
400W Transient Voltage Suppressor Low profile package. Low inductance. Excellent clamping capability. 400W peak pulse power capability at 10×1000μs waveform. Typical IR less than 1μA above 11V. Fast response time: typically less than 1.0ps from 0V to VBR min. High te |
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JIEJIE |
400W Transient Voltage Suppressor Low profile package. Low inductance. Excellent clamping capability. 400W peak pulse power capability at 10×1000μs waveform. Typical IR less than 1μA above 11V. Fast response time: typically less than 1.0ps from 0V to VBR min. High te |
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JIEJIE |
400W Transient Voltage Suppressor Low profile package. Low inductance. Excellent clamping capability. 400W peak pulse power capability at 10×1000μs waveform. Typical IR less than 1μA above 11V. Fast response time: typically less than 1.0ps from 0V to VBR min. High te |
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JIEJIE |
400W Transient Voltage Suppressor Low profile package. Low inductance. Excellent clamping capability. 400W peak pulse power capability at 10×1000μs waveform. Typical IR less than 1μA above 11V. Fast response time: typically less than 1.0ps from 0V to VBR min. High te |
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JIEJIE |
400W Transient Voltage Suppressor Low profile package. Low inductance. Excellent clamping capability. 400W peak pulse power capability at 10×1000μs waveform. Typical IR less than 1μA above 11V. Fast response time: typically less than 1.0ps from 0V to VBR min. High te |
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JIEJIE |
400W Transient Voltage Suppressor Low profile package. Low inductance. Excellent clamping capability. 400W peak pulse power capability at 10×1000μs waveform. Typical IR less than 1μA above 11V. Fast response time: typically less than 1.0ps from 0V to VBR min. High te |
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JIEJIE |
400W Transient Voltage Suppressor Low profile package. Low inductance. Excellent clamping capability. 400W peak pulse power capability at 10×1000μs waveform. Typical IR less than 1μA above 11V. Fast response time: typically less than 1.0ps from 0V to VBR min. High te |
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JIEJIE |
400W Transient Voltage Suppressor Low profile package. Low inductance. Excellent clamping capability. 400W peak pulse power capability at 10×1000μs waveform. Typical IR less than 1μA above 11V. Fast response time: typically less than 1.0ps from 0V to VBR min. High te |
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JIEJIE |
Zener Diodes Silicon power zener diodes. Low zener impedance. 2500mW rating on FR-4 or FR-5 board. Voltage range includes breakdown voltages from 6.8V to 200V with ± 5 % for SMAZPC series. Low profile surface-mount package. Zener and surge current s |
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JIEJIE |
Zener Diodes Silicon power zener diodes. Low zener impedance. 2500mW rating on FR-4 or FR-5 board. Voltage range includes breakdown voltages from 6.8V to 200V with ± 5 % for SMAZPC series. Low profile surface-mount package. Zener and surge current s |
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