| No. | Partie # | Fabricant | Description | Fiche Technique |
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JIANGSU CHANGJIANG |
PNP Transistor TRANSISTOR (PNP) TO¡ª 92 Power dissipation PCM : 0.25 W£¨ Tamb=25¡æ£© Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ 1.EMITTER 2. COLLECTOR 3. |
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JIANGSU CHANGJIANG |
PNP Transistor z High Breakdown Voltage 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power |
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JIANGSU CHANGJIANG |
PNP Transistor TRANSISTOR (PNP) TO¡ª 92 Power dissipation PCM : 0.25 W£¨ Tamb=25¡æ£© Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ 1.EMITTER 2. COLLECTOR 3. |
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