| No. | Partie # | Fabricant | Description | Fiche Technique |
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JGD |
Surface Mount Schottky Barrier Rectifiers * Reverse voltage - 20 to 40 V * Forward current - 1 A 1N5817W THRU 1N5819W Surface Mount Schottky Barrier Rectifiers A C B DE G F SOD-123F DIM INCHES MM MIN MAX MIN MAX A 0.138 0.154 3.5 3.9 B 0.067 0.075 1.7 1.9 C 0.102 0.114 2 |
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JGD |
0.4W Low Voltage Avalanche Diodes * Low Zener noise specified * Low Zener impedance * Low leakage current * Hermetically sealed glass package 1N5518 THRU 1N5546 0.4W Low Voltage Avalanche Diodes ABA C D Cathode Mark DO-35 INCHES MM DIM MIN MAX MIN MAX A 1.083 --- 27.50 --- B |
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JGD |
3.0 Amp. Schottky Barrier Rectifiers 1N5820 THRU 1N5822 3.0 Amp. Schottky Barrier Rectifiers * Low Forward Voltage Drop * High Current Capability * High Reliability * High Surge Current Capability Mechanical Data Package Outline Dimensions DO-201AD： * Case: Molded plastic * Epoxy: U |
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JGD |
1.5 Amps. Silicon Rectifiers 1N5391 THRU 1N5399 1.5 Amps. Silicon Rectifiers * Low Forward Voltage Drop * High Current Capability * High Reliability * High Surge Current Capability Mechanical Data Package Outline Dimensions DO-15： * Case: Molded plastic * Epoxy: UL 94V-0 rat |
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JGD |
Surface Mount Schottky Barrier Rectifiers * Reverse voltage - 20 to 40 V * Forward current - 1 A 1N5817W THRU 1N5819W Surface Mount Schottky Barrier Rectifiers A C B DE G F SOD-123F DIM INCHES MM MIN MAX MIN MAX A 0.138 0.154 3.5 3.9 B 0.067 0.075 1.7 1.9 C 0.102 0.114 2 |
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JGD |
1.5 Amps. Silicon Rectifiers 1N5391 THRU 1N5399 1.5 Amps. Silicon Rectifiers * Low Forward Voltage Drop * High Current Capability * High Reliability * High Surge Current Capability Mechanical Data Package Outline Dimensions DO-15： * Case: Molded plastic * Epoxy: UL 94V-0 rat |
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JGD |
1.5 Amps. Silicon Rectifiers 1N5391 THRU 1N5399 1.5 Amps. Silicon Rectifiers * Low Forward Voltage Drop * High Current Capability * High Reliability * High Surge Current Capability Mechanical Data Package Outline Dimensions DO-15： * Case: Molded plastic * Epoxy: UL 94V-0 rat |
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JGD |
0.4W Low Voltage Avalanche Diodes * Low Zener noise specified * Low Zener impedance * Low leakage current * Hermetically sealed glass package 1N5518 THRU 1N5546 0.4W Low Voltage Avalanche Diodes ABA C D Cathode Mark DO-35 INCHES MM DIM MIN MAX MIN MAX A 1.083 --- 27.50 --- B |
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JGD |
0.4W Low Voltage Avalanche Diodes * Low Zener noise specified * Low Zener impedance * Low leakage current * Hermetically sealed glass package 1N5518 THRU 1N5546 0.4W Low Voltage Avalanche Diodes ABA C D Cathode Mark DO-35 INCHES MM DIM MIN MAX MIN MAX A 1.083 --- 27.50 --- B |
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JGD |
0.4W Low Voltage Avalanche Diodes * Low Zener noise specified * Low Zener impedance * Low leakage current * Hermetically sealed glass package 1N5518 THRU 1N5546 0.4W Low Voltage Avalanche Diodes ABA C D Cathode Mark DO-35 INCHES MM DIM MIN MAX MIN MAX A 1.083 --- 27.50 --- B |
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JGD |
0.4W Low Voltage Avalanche Diodes * Low Zener noise specified * Low Zener impedance * Low leakage current * Hermetically sealed glass package 1N5518 THRU 1N5546 0.4W Low Voltage Avalanche Diodes ABA C D Cathode Mark DO-35 INCHES MM DIM MIN MAX MIN MAX A 1.083 --- 27.50 --- B |
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JGD |
0.4W Low Voltage Avalanche Diodes * Low Zener noise specified * Low Zener impedance * Low leakage current * Hermetically sealed glass package 1N5518 THRU 1N5546 0.4W Low Voltage Avalanche Diodes ABA C D Cathode Mark DO-35 INCHES MM DIM MIN MAX MIN MAX A 1.083 --- 27.50 --- B |
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JGD |
3W Silicon Planar Power Zener Diodes 1N5913B THRU 1N5939B 3 W Silicon Planar Power Zener Diodes ABA Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Maximum Steady State Power Dissipation at TL = 75 ℃, Lead Length = 3/8" Junction Temperature Storage Temperature Range C D Cat |
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JGD |
3W Silicon Planar Power Zener Diodes 1N5913B THRU 1N5939B 3 W Silicon Planar Power Zener Diodes ABA Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Maximum Steady State Power Dissipation at TL = 75 ℃, Lead Length = 3/8" Junction Temperature Storage Temperature Range C D Cat |
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JGD |
3W Silicon Planar Power Zener Diodes 1N5913B THRU 1N5939B 3 W Silicon Planar Power Zener Diodes ABA Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Maximum Steady State Power Dissipation at TL = 75 ℃, Lead Length = 3/8" Junction Temperature Storage Temperature Range C D Cat |
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JGD |
3W Silicon Planar Power Zener Diodes 1N5913B THRU 1N5939B 3 W Silicon Planar Power Zener Diodes ABA Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Maximum Steady State Power Dissipation at TL = 75 ℃, Lead Length = 3/8" Junction Temperature Storage Temperature Range C D Cat |
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JGD |
1.5 Amps. Silicon Rectifiers 1N5391S THRU 1N5399S 1.5 Amps. Silicon Rectifiers * Low Forward Voltage Drop * High Current Capability * High Reliability * High Surge Current Capability Mechanical Data Package Outline Dimensions DO-41： * Case: Molded plastic * Epoxy: UL 94V-0 r |
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JGD |
1.5 Amps. Silicon Rectifiers 1N5391S THRU 1N5399S 1.5 Amps. Silicon Rectifiers * Low Forward Voltage Drop * High Current Capability * High Reliability * High Surge Current Capability Mechanical Data Package Outline Dimensions DO-41： * Case: Molded plastic * Epoxy: UL 94V-0 r |
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JGD |
3W Silicon Planar Power Zener Diodes 1N5913B THRU 1N5939B 3 W Silicon Planar Power Zener Diodes ABA Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Maximum Steady State Power Dissipation at TL = 75 ℃, Lead Length = 3/8" Junction Temperature Storage Temperature Range C D Cat |
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JGD |
3W Silicon Planar Power Zener Diodes 1N5913B THRU 1N5939B 3 W Silicon Planar Power Zener Diodes ABA Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Maximum Steady State Power Dissipation at TL = 75 ℃, Lead Length = 3/8" Junction Temperature Storage Temperature Range C D Cat |
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