| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
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JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
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|
JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
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|
JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
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|
|
JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
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|
|
|
JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
|
|
|
|
JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
|
|
|
|
JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
|
|
|
|
JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
|
|
|
|
JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
|
|
|
|
JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
|
|
|
|
JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
|
|
|
|
JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
|
|
|
|
JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
|
|
|
|
JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
|
|
|
|
JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
|
|
|
|
JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
|
|
|
|
JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
|
|
|
|
JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
|
|
|
|
JFDsemi |
Glass Passivated TVS ● For surface mounted applications in order to optimize board space ● Low profile space ● Glass passivated chip ● Low inductance ● Excellent clamping capability ● Very fast response time ● Typical ID less than 1µA at VWM ● 200 W peak pulse power capa |
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