| No. | Partie # | Fabricant | Description | Fiche Technique |
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JCST |
NPN Transistor z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Complement the 2SB1260 z Low Collector-Emitter Saturation Voltage SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VC |
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JCST |
NPN Transistor z Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A) 2.COLLECTOR 3.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Ba |
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JCST |
NPN Transistor z Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A) z Excellent DC Current Gain Characteristics. TO-251-3L 1.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2.COLLECTOR Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Vol |
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JCST |
NPN Transistor z Low VCE(sat) z Complements the 2SB1185 TO – 220 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vol |
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JCST |
NPN Transistor z High DC current gain. z High emitter-base voltage. z Low VCE (sat). MARKING: BBV,BBW MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vol |
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