| No. | Partie # | Fabricant | Description | Fiche Technique |
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JCET |
NPN Transistor Power dissipation 1. COLLECTOR PCM: 0.625 W (Tamb=25℃) 2. BASE Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃ ELECTRI |
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JCET |
NPN Transistor Power dissipation 1. COLLECTOR PCM: 0.625 W (Tamb=25℃) 2. BASE Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃ ELECTRI |
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JCET |
NPN Transistor Power dissipation 1. COLLECTOR PCM: 0.625 W (Tamb=25℃) 2. BASE Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃ ELECTRI |
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|
JCET |
NPN Transistor Power dissipation 1. COLLECTOR PCM: 0.625 W (Tamb=25℃) 2. BASE Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 50 V BC338 30 V Operating and storage junction temperature range 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃ ELECTRI |
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