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Invensys |
0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT • • • • • • • • UL certificate # E326243 Glass passivated junction Ideal for printed circuit board Reliable low cost construction Plastic material has Underwriters Laboratory Flammability Classification 94V-0 Surge overload rating to 350 amperes peak |
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Invensys |
0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT • 650 V @ TJ = 150°C • Typ. RDS(on) = 820 mΩ • Ultra Low Gate Charge (Typ. Qg = 13 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 49 pF) • 100% Avalanche Tested • ESD Improved Capacity • RoHS Compliant Description SuperFET® II MOSFET is F |
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Invensys |
0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT • RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A • Ultra Low Gate Charge (Typ.Qg = 17.8nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant SupreMOSTM February 2010 Description The SupreMOS MOSFET, Fairchild’s next gener |
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Invensys |
0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT • 650 V @ TJ = 150°C • Typ. RDS(on) = 36 mΩ • Ultra Low Gate Charge (Typ. Qg = 277 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF) • 100% Avalanche Tested • RoHS Compliant Description SuperFET® II MOSFET is Fairchild Semiconductor’ |
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Invensys |
0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT • 650 V @ TJ = 150°C • Typ. RDS(on) = 65 mΩ • Ultra Low Gate Charge (Typ. Qg = 165 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 441 pF) • 100% Avalanche Tested • RoHS Compliant Description SuperFET® II MOSFET is Fairchild Semiconductor’ |
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