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Intersil |
N-Channel Power MOSFET • 23A, 200V, RDS(on) = 0.115Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(S |
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Intersil |
P-Channel Power MOSFET • 14A, -200V, RDS(on) = 0.315Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD( |
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Intersil |
N-Channel Power MOSFET • 25A, 100V, RDS(on) = 0.07Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si |
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Intersil |
N-Channel Power MOSFET • 23A, 200V, RDS(on) = 0.115Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(S |
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Intersil |
P-Channel Power MOSFET • 23A, -100V, rDS(ON) = 0.140Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-RAD Specifications to 100K RAD (Si) Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si) Performance Permits Limited Use to 300 |
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Intersil |
P-Channel Power MOSFET • 14A, -200V, RDS(on) = 0.315Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD( |
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Intersil |
N-Channel Power MOSFET • 25A, 100V, RDS(on) = 0.07Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si |
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Intersil |
N-Channel Power MOSFET • 25A, 100V, RDS(on) = 0.07Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si |
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Intersil |
N-Channel Power MOSFET • 23A, 200V, RDS(on) = 0.115Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(S |
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Intersil |
N-Channel Power MOSFET • 17A, 250V, RDS(on) = 0.185Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(S |
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Intersil |
N-Channel Power MOSFET • 17A, 250V, RDS(on) = 0.185Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(S |
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Intersil |
N-Channel Power MOSFET • 17A, 250V, RDS(on) = 0.185Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(S |
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Intersil |
N-Channel Power MOSFET • 9A, 500V, RDS(on) = 0.615Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si |
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Intersil |
N-Channel Power MOSFET • 9A, 500V, RDS(on) = 0.615Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si |
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Intersil |
N-Channel Power MOSFET • 9A, 500V, RDS(on) = 0.615Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si |
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Intersil |
P-Channel Power MOSFET • 23A, -100V, rDS(ON) = 0.140Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-RAD Specifications to 100K RAD (Si) Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si) Performance Permits Limited Use to 300 |
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Intersil |
P-Channel Power MOSFET • 23A, -100V, rDS(ON) = 0.140Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-RAD Specifications to 100K RAD (Si) Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si) Performance Permits Limited Use to 300 |
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Intersil |
P-Channel Power MOSFET • 14A, -200V, RDS(on) = 0.315Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD( |
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