Intersil Corporation HM4 fiche technique

No.	Partie #	Fabricant	Description
1	HM4-6642-9	Intersil Corporation	512 x 8 CMOS PROM • Low Power Standby and Operating Power - ICCSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100µA - ICCOP . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA at 1MHz • Fast Access Time. . . . . . . . . . . . . . . . . . . .
2	HM4-6516-9	Intersil Corporation	2K x 8 CMOS RAM • Low Power Standby . . . . . . . . . . . . . . . . . . . 275µW Max • Low Power Operation . . . . . . . . . . . . . 55mW/MHz Max • Fast Access Time. . . . . . . . . . . . . . . . . . 120/200ns Max • Industry Standard Pinout • Single Supply . . . . .
3	HM4-65162B-9	Intersil Corporation	2K x 8 Asynchronous CMOS Static RAM • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max • Low Standby Current. . . . . . . . . . . . . . . . . . . .50µA Max • Low Operating Current . . . . . . . . . . . . . . . . . 70mA Max • Data Retention at 2.0V . . . . . . . . . .
4	HM4-65162-9	Intersil Corporation	2K x 8 Asynchronous CMOS Static RAM • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max • Low Standby Current. . . . . . . . . . . . . . . . . . . .50µA Max • Low Operating Current . . . . . . . . . . . . . . . . . 70mA Max • Data Retention at 2.0V . . . . . . . . . .
5	HM4-65162C-9	Intersil Corporation	2K x 8 Asynchronous CMOS Static RAM • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max • Low Standby Current. . . . . . . . . . . . . . . . . . . .50µA Max • Low Operating Current . . . . . . . . . . . . . . . . . 70mA Max • Data Retention at 2.0V . . . . . . . . . .
6	HM4-6617B883	Intersil Corporation	2K x 8 CMOS PROM • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power Standby and Operating Power - ICCSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100µA - ICCOP .
7	HM4-65642883	Intersil Corporation	8K x 8 Asynchronous CMOS Static RAM • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell • Low Standby Supply Current . . . . . . . . . . . . . . . .100µA • Low Operating
8	HM4-65642B883	Intersil Corporation	8K x 8 Asynchronous CMOS Static RAM • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell • Low Standby Supply Current . . . . . . . . . . . . . . . .100µA • Low Operating
9	HM4-6514-B	Intersil Corporation	1024 x 4 CMOS RAM • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max • Low Power Operation . . . . . . . . . . . . . 35mW/MHz Max • Data Retention . . . . . . . . . . . . . . . . . . . . . . . at 2.0V Min • TTL Compatible Input/Output • Common Data In