Intersil Corporation ACS fiche technique

No.	Partie #	Fabricant	Description
1	ACS02MS	Intersil Corporation	Radiation Hardened Quad 2-Input NOR Gate
2	ACS00MS	Intersil Corporation	Radiation Hardened Quad 2-Input NAND Gate • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose 300K RAD (Si) • Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ) • SEU LET Threshold >80 MEV-cm2/mg • Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse • Latch-Up Free Under Any Condi
3	ACS11MS	Intersil Corporation	Radiation Hardened Triple 3-Input AND Gate • QML Qualiﬁed Per MIL-PRF-38535 Requirements • 1.25 Micron Radiation Hardened SOS CMOS • Radiation Environment - Latch-Up Free Under any Conditions - Total Dose. . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD (Si) - SEU Immunity . . . . . . .
4	ACS147MS	Intersil Corporation	Radiation Hardened 10-to-4 Line Priority Encoder • QML Qualiﬁed Per MIL-PRF-38535 Requirements • 1.25 Micron Radiation Hardened SOS CMOS • Radiation Environment - Latch-Up Free Under Any Conditions - Total Dose (Max.) . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEU Immunity . . . . . . . .
5	ACS174MS	Intersil Corporation	Radiation Hardened Hex D-Type Flip-Flop • QML Qualiﬁed Per MIL-PRF-38535 Requirements • 1.25 Micron Radiation Hardened SOS CMOS • Radiation Environment - Latch-Up Free Under Any Conditions - Total Dose (Max.) . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEU Immunity . . . . . . . .
6	ACS245MS	Intersil Corporation	Radiation Hardened Octal Non-Inverting Bidirectional Bus Transceiver • Devices QML Qualified in Accordance with MIL-PRF38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96707 and Intersil’ QM Plan • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose >300K RAD (Si) • Single Event Upset
7	ACS27MS	Intersil Corporation	Radiation Hardened Triple 3-Input NOR Gate • QML Qualiﬁed Per MIL-PRF-38535 Requirements • 1.25 Micron Radiation Hardened SOS CMOS • Radiation Environment - Latch-Up Free Under Any Conditions - Total Dose (Max.) . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEU Immunity . . . . . . . .
8	ACS373MS	Intersil Corporation	Radiation Hardened Octal Transparent Latch • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose 300K RAD (Si) • Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ) • SEU LET Threshold >80 MEV-cm2/mg • Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse • Latch-Up Free Under Any Condi
9	ACS374MS	Intersil Corporation	Radiation Hardened Octal D Flip-Flop • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose 300K RAD (Si) • Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ) • SEU LET Threshold >80 MEV-cm2/mg • Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse • Latch-Up Free Under Any Condi
10	ACS03MS	Intersil Corporation	Radiation Hardened Quad 2-Input NAND Gate Pinouts • Devices QML Qualiﬁed in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96703 and Intersil’s QM Plan • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose . . . . . . . . . . . .
11	ACS04MS	Intersil Corporation	Radiation Hardened Hex Inverter
12	ACS05MS	Intersil Corporation	Radiation Hardened Hex Inverter
13	ACS08MS	Intersil Corporation	Radiation Hardened Quad 2-Input AND Gate • QML Qualiﬁed Per MIL-PRF-38535 Requirements • 1.25Micron Radiation Hardened SOS CMOS • Radiation Environment - Latch-up Free Under any Conditions - Total Dose . . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEU Immunity . . . . . . .
14	ACS109MS	Intersil Corporation	Radiation Hardened Dual J-K Flip-Flop
15	ACS10MS	Intersil Corporation	Radiation Hardened Triple Three-Input NAND Gate • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose 300K RAD (Si) • Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ) • SEU LET Threshold >80 • Dose Rate Upset >1011 MEV-cm2 /mg RAD (Si)/s, 20ns Pulse -55oC +125oC • Latch-Up Free
16	ACS112MS	Intersil Corporation	Radiation Hardened Dual J-K Flip-Flop • Devices QML Qualiﬁed in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96704 and Intersil’sIntersil QM Plan • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose . . . . . . . . . . . . .
17	ACS138MS	Intersil Corporation	Radiation Hardened 3-to-8 Line Decoder/Demultiplexer • QML Qualiﬁed Per MIL-PRF-38535 Requirements • 1.25Micron Radiation Hardened SOS CMOS • Radiation Environment - Latch-up Free Under any Conditions - Total Dose . . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEU Immunity . . . . . . .
18	ACS151MS	Intersil Corporation	Radiation Hardened 8-Input Multiplexer • QML Qualiﬁed Per MIL-PRF-38535 Requirements • 1.25Micron Radiation Hardened SOS CMOS • Radiation Environment - Latch-up Free Under any Conditions - Total Dose . . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEU Immunity . . . . . . .
19	ACS157MS	Intersil Corporation	Radiation Hardened Quad 2-Input Non-Inverting Multiplexer • QML Qualiﬁed Per MIL-PRF-38535 Requirements • 1.25Micron Radiation Hardened SOS CMOS • Radiation Environment - Latch-up Free Under any Conditions - Total Dose . . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si) - SEU Immunity . . . . . . .
20	ACS161MS	Intersil Corporation	Radiation Hardened 4-Bit Synchronous Counter • Devices QML Qualiﬁed in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96706 and Intersil’ QM Plan • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose . . . . . . . . . . . . . . . . . .