| No. | Partie # | Fabricant | Description | Fiche Technique |
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Intersil |
2K x 8 CMOS RAM • Low Power Standby . . . . . . . . . . . . . . . . . . . 275µW Max • Low Power Operation . . . . . . . . . . . . . 55mW/MHz Max • Fast Access Time. . . . . . . . . . . . . . . . . . 120/200ns Max • Industry Standard Pinout • Single Supply . . . . . |
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Intersil |
2K x 8 Asynchronous CMOS Static RAM • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max • Low Standby Current. . . . . . . . . . . . . . . . . . . .50µA Max • Low Operating Current . . . . . . . . . . . . . . . . . 70mA Max • Data Retention at 2.0V . . . . . . . . . . |
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Intersil |
16K x 1 Asynchronous CMOS Static RAM • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max • Low Standby Current. . . . . . . . . . . . . . . . . . . .50µA Max • Low Operating Current . . . . . . . . . . . . . . . . . 50mA Max • Data Retention at 2.0V . . . . . . . . . . |
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Intersil |
16K x 1 Asynchronous CMOS Static RAM • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max • Low Standby Current. . . . . . . . . . . . . . . . . . . .50µA Max • Low Operating Current . . . . . . . . . . . . . . . . . 50mA Max • Data Retention at 2.0V . . . . . . . . . . |
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Intersil Corporation |
Li-ion/Li Polymer Linear Battery Charger • Integrated Linear Pass Element • Integrated Charge Current Sensor • No External Reverse Blocking Diode Required • 1% Voltage Accuracy • Programmable Current Limit Up to 2.0A • Programmable End-of-Charge Current • Trickle Charge an Over Discharged B |
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