International Rectifier P43 fiche technique

No.	Partie #	Fabricant	Description
1	IRFP4368PBF	International Rectifier	HEXFET Power MOSFET g Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 350c 250c 195 1280 520 3.4 ± 20 13 -55 to + 175 300 10lbxin (1.1Nxm) Units A W W/°C V V/ns °C Avalanche Characteristics Single Pulse Avalanche Energy e EAS (Th
2	P435	International Rectifier	PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM , V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical design and assembly UL E78996 approved 40
3	IRFP4332PBF	International Rectifier	PDP SWITCH l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Resp
4	P431	International Rectifier	PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM , V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical design and assembly UL E78996 approved 40
5	P432	International Rectifier	PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM , V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical design and assembly UL E78996 approved 40
6	P433	International Rectifier	PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM , V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical design and assembly UL E78996 approved 40
7	P434	International Rectifier	PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM , V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical design and assembly UL E78996 approved 40
8	IRFP4310ZPBF	International Rectifier	HEXFET Power MOSFET orage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 134c 95 120 560 280 1.9 ± 20 18 -55 to + 175 300 10lbxin (1.1Nxm) 130 See Fig. 14, 15, 22a, 22b, Units A W W/°C V V/ns °C Avala
9	IRFP4321PBF	International Rectifier	HEXFET Power MOSFET m case) Mounting torque, 6-32 or M3 screw Max. 78 c 55 330 310 2.0 ±30 210 -55 to + 175 300 10lbxin (1.1Nxm) Typ. – – – 0.24 – – – Max. 0.49 – – – 40 Units A W W/°C V mJ °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case g Case-to-Sink, Fl