| No. | Partie # | Fabricant | Description | Fiche Technique |
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International Rectifier |
SELF-OSCILLATING HALF-BRIDGE n n n n n n Product Summary VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 500V 50% 1.2µs 3.0Ω 2.0W Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurat |
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International Rectifier |
SELF-OSCILLATING HALF-BRIDGE n n n n n n n Product Summary VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 400V 50% 1.2µs 3.6Ω 2.0W Output Power MOSFETs in half-bridge configuration 400V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Boots |
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International Rectifier |
SELF-OSCILLATING HALF-BRIDGE n n n n n n n Product Summary VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 400V 50% 1.2µs 1.8Ω 2.0W Output Power MOSFETs in half-bridge configuration 400V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Boots |
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International Rectifier |
SELF-OSCILLATING HALF-BRIDGE n n n n n n n Product Summary VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 500V 50% 1.2µs 3.0Ω 2.0W Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Boots |
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International Rectifier |
SELF-OSCILLATING HALF-BRIDGE n n n n n n Product Summary VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 250V 50% 1.2µs 2.0Ω 2.0W Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurat |
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International Rectifier |
SELF-OSCILLATING HALF-BRIDGE n n n n n n Product Summary VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 250V 50% 1.2µs 1.1Ω 2.0W Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurat |
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International Rectifier |
SELF-OSCILLATING HALF-BRIDGE n n n n n n Product Summary VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 400V 50% 1.2µs 3.6Ω 2.0W Output Power MOSFETs in half-bridge configuration 400V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurat |
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International Rectifier |
SELF-OSCILLATING HALF-BRIDGE n n n n n n Product Summary VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 400V 50% 1.2µs 1.8Ω 2.0W Output Power MOSFETs in half-bridge configuration 400V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurat |
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International Rectifier |
SELF-OSCILLATING HALF-BRIDGE n n n n n n Product Summary VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 300V 50% 1.2µs 0.75Ω 2.0W Output Power MOSFETs in half-bridge configuration 300V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accura |
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International Rectifier |
SELF-OSCILLATING HALF-BRIDGE n n n n n n n Product Summary VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 250V 50% 1.2µs 2.0Ω 2.0W Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Boots |
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International Rectifier |
SELF-OSCILLATING HALF-BRIDGE n n n n n n n Product Summary VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 250V 50% 1.2µs 1.1Ω 2.0W Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Boots |
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International Rectifier |
SELF-OSCILLATING HALF BRIDGE • • • • • • • • • • • • • • • • Output power MOSFETs in half-bridge configuration High side gate drive designed for bootstrap operation Bootstrap diode integrated into package (HD type) Tighter initial deadtime control Low temperature coefficient dea |
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International Rectifier |
SELF-OSCILLATING HALF BRIDGE • • • • • • • • • • • • • • • • Output power MOSFETs in half-bridge configuration High side gate drive designed for bootstrap operation Bootstrap diode integrated into package (HD type) Tighter initial deadtime control Low temperature coefficient dea |
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International Rectifier |
SELF-OSCILLATING HALF BRIDGE • • • • • • • • • • • • • • • • Output power MOSFETs in half-bridge configuration High side gate drive designed for bootstrap operation Bootstrap diode integrated into package (HD type) Tighter initial deadtime control Low temperature coefficient dea |
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International Rectifier |
SELF-OSCILLATING HALF-BRIDGE n n n n n n n Product Summary VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 300V 50% 1.2µs 0.75Ω 2.0W Output Power MOSFETs in half-bridge configuration 300V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Boot |
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International Rectifier |
UNIVERSAL ACTIVE ORING CONTROLLER Controller / driver IC in an SO-8 package for implementation of Active ORing / reverse polarity protection using N-channel Power MOSFETs Suitable for both input ORing (for carrier class telecom equipment) as well as output ORing for |
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