| No. | Partie # | Fabricant | Description | Fiche Technique |
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International Rectifier |
IGBT PIM MODULE • Low VCE (on) Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient • Ceramic DB |
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International Rectifier |
IRGB20B60PD1 • NPT Technology, Positive Temperature Coefficient • Lower VCE(SAT) • Lower Parasitic Capacitances • Minimal Tail Current • HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode • Tighter Distribution of Parameters • Higher Reliability C G E n-channel VCE |
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International Rectifier |
HYBRID-HIGH RELIABILITY RADIATION HARDENED DC-DC CONVERTER Total Dose > 200 kRads(Si) typically usable to > 300 kRads(Si) SEE Hardened to LET up to 82 MeV ·cm2/mg Internal EMI filter; Converter Capable of meeting MIL-STD-461C CE03 Low Weight < 100 grams Magnetically Coupled Feedback 18V to 50V DC |
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International Rectifier |
SMPS IGBT n-channel Equivalent MOSFET Parameters RCE(on) typ. = 158mΩ ID (FET equivalent) = 20A Benefits • Parallel Operation for Higher Current Applications • Lower Conduction Losses and Switching Losses • Higher Switching Frequency up to 150kHz E C G |
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International Rectifier |
SMPS IGBT NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability n-channel Equivalent MOSFET Param |
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