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International Rectifier |
Soft Recovery Diode Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Ceramic Eyelets Ultrafast, Soft Recovery Diode V4 = 200V I. )8 = 16A tHH = 35ns Description These Ultrafast, soft reovery diodes are optimize |
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International Rectifier |
Ultrafast/ Soft Recovery Diode • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions TM Ultrafast, Soft Recovery Diode 2 VR = 600V VF = 1.7V Qrr * = 65nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switc |
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International Rectifier |
Power MOSFET 0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Insu |
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International Rectifier |
Power MOSFET ymbol EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. – – – – – – – – – Max. 370 17 22 Units mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Gr |
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International Rectifier |
IRFB17N60K N Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. – – – – – – – – – Max. 330 17 34 Units mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction- |
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International Rectifier |
SMPS MOSFET ansistor Forward l Half & Full Bridge l Power Factor Correction Boost Notes through are on page 8 www.irf.com 1 11/11/03 IRFB11N50APbF Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Sourc |
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International Rectifier |
Power MOSFET ard Half & Full Bridge Power Factor Correction Boost through are on page 8 Notes www.irf.com 1 3/30/99 IRFB11N5OA Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage S |
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International Rectifier |
Insulated Ultrafast Rectifier Module • • • • • • • • • • Two Fully Independent Diodes Ceramic Fully Insulated Package (VISOL = 2500V AC) Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape Low Forward Voltage Optimized for Power Conversion: Welding and Industrial SMPS Ap |
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International Rectifier |
Soft Recovery Diode • • • • • Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Ceramic Eyelets Ultrafast, Soft Recovery Diode VR = 200V IF(AV) = 16A trr = 30ns Description These Ultrafast, soft recovery diodes are optimiz |
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International Rectifier |
Power MOSFET ard Half & Full Bridge Power Factor Correction Boost through are on page 8 Notes www.irf.com 1 3/30/99 IRFB11N5OA Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage S |
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International Rectifier |
SMPS MOSFET and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate charge results in simpler drive requirements. • Enhanced dv/dt capabilities offer improved ruggedness. TO-220AB • Higher Gate voltage thresh |
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International Rectifier |
IRFB11N50A Two Transistor Forward Half & Full Bridge Power Factor Correction Boost through are on page 8 Notes www.irf.com 1 3/30/99 IRFB11N5OA Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Sourc |
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International Rectifier |
Insulated Ultrafast Rectifier Module • • • • • • • • • • Two Fully Independent Diodes Ceramic Fully Insulated Package (VISOL = 2500V AC) Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape Low Forward Voltage Optimized for Power Conversion: Welding and Industrial SMPS Ap |
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International Rectifier |
SMPS MOSFET EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. – – – – – – – – – Max. 560 14 25 Units mJ A mJ Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface |
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International Rectifier |
Soft Recovery Diode • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions VR = 1200V VF(typ.)* = 2.4V IF(AV) = 6A Qrr (typ.)= 116nC IRRM(typ.) = 4.4A trr (typ.) = 26ns di(rec)M/dt (typ.)* = 1 |
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International Rectifier |
HEXFET Power MOSFET ) 10 lbf •in (1.1N •m) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V input Forward Converter Notes through are on page 11 www.irf.com 1 6/1/04 IRFB/IRFS/IRFSL17N20DPbF Static @ TJ = 25°C (unless otherwise specified) www.da |
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International Rectifier |
SMPS MOSFET .55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NO |
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International Rectifier |
Power MOSFET valanche Characteristics Parameter dEAS Single Pulse Avalanche Energy ÃcIAR Avalanche Current cEAR Repetitive Avalanche Energy Typ. – – – – – – – – – Max. 310 17 28 Units mJ A mJ Thermal Resistance Parameter RθJC RθCS Junction-to-Case Case-to-Sink, |
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International Rectifier |
Power MOSFET Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. – – – – – – – – – Max. 560 14 25 Units mJ A mJ Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. – – – 0.50 – – |
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International Rectifier |
Power MOSFET /ns °C Typical SMPS Topologies l Telecom 48V input Forward Converter Notes through are on page 11 www.irf.com 1 4/26/00 IRFB/IRFS/IRFSL17N20D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(B |
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