| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
International Rectifier |
IRFB17N60K N Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. – – – – – – – – – Max. 330 17 34 Units mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction- |
|
|
|
|
International Rectifier |
HEXFET Power MOSFET ) 10 lbf •in (1.1N •m) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V input Forward Converter Notes through are on page 11 www.irf.com 1 6/1/04 IRFB/IRFS/IRFSL17N20DPbF Static @ TJ = 25°C (unless otherwise specified) www.da |
|
|
|
|
International Rectifier |
SMPS MOSFET .55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NO |
|
|
|
|
International Rectifier |
Power MOSFET /ns °C Typical SMPS Topologies l Telecom 48V input Forward Converter Notes through are on page 11 www.irf.com 1 4/26/00 IRFB/IRFS/IRFSL17N20D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(B |
|
|
|
|
International Rectifier |
Power MOSFET and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate charge results in simpler drive requirements. • Enhanced dv/dt capabilities offer improved ruggedness. • Higher Gate voltage threshold offer |
|
|
|
|
International Rectifier |
SMPS MOSFET ature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw °C lbft.in(N.m) Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forwar |
|
|
|
|
International Rectifier |
SMPS MOSFET N Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. – – – – – – – – – Max. 330 17 34 Units mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction- |
|