| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
International Rectifier |
SCHOTTKY RECTIFIER The 440CNQ030 center tap, high current, Schottky rectifier module has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical |
|
|
|
|
International Rectifier |
N-Channel Power MOSFET Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Curre |
|
|
|
|
International Rectifier |
Power MOSFET L7440PbF RDS(on), Drain-to -Source On Resistance (m Ω) ID, Drain Current (A) 7.0 ID = 100A 6.0 5.0 4.0 TJ = 125°C 3.0 2.0 TJ = 25°C 1.0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 w |
|
|
|
|
International Rectifier |
Power MOSFET to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 200 Limited By Package 150 100 50 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature 1 www.irf.com © 2015 International Rectif |
|
|
|
|
International Rectifier |
HEXFET Power MOSFET Reel 2000 Tube/Bulk 75 180 Orderable Part Number IRFR7440PbF IRFR7440TRPbF IRFU7440PbF 8 ID = 90A ID, Drain Current (A) 6 160 140 120 100 80 60 40 LIMITED BY PACKAGE 4 TJ = 125°C 2 TJ = 25°C 0 4 8 12 16 20 20 0 25 50 75 100 125 150 175 VGS |
|
|
|
|
International Rectifier |
HEXFET Power MOSFET Reel 2000 Tube/Bulk 75 180 Orderable Part Number IRFR7440PbF IRFR7440TRPbF IRFU7440PbF 8 ID = 90A ID, Drain Current (A) 6 160 140 120 100 80 60 40 LIMITED BY PACKAGE 4 TJ = 125°C 2 TJ = 25°C 0 4 8 12 16 20 20 0 25 50 75 100 125 150 175 VGS |
|
|
|
|
International Rectifier |
Power MOSFET (V) Fig 1. Typical On-Resistance vs. Gate Voltage 240 200 Limited By Package 160 120 80 40 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature 1 www.irf.com © 2013 International Rectifier July 1 |
|
|
|
|
International Rectifier |
Power MOSFET |
|
|
|
|
International Rectifier |
Power MOSFET |
|
|
|
|
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 500V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 22A n-channel Description Insulat |
|
|
|
|
International Rectifier |
Power MOSFET L7440PbF RDS(on), Drain-to -Source On Resistance (m Ω) ID, Drain Current (A) 7.0 ID = 100A 6.0 5.0 4.0 TJ = 125°C 3.0 2.0 TJ = 25°C 1.0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 w |
|
|
|
|
International Rectifier |
HEXFET Power MOSFET Reel 2000 Tube/Bulk 75 180 Orderable Part Number IRFR7440PbF IRFR7440TRPbF IRFU7440PbF 8 ID = 90A ID, Drain Current (A) 6 160 140 120 100 80 60 40 LIMITED BY PACKAGE 4 TJ = 125°C 2 TJ = 25°C 0 4 8 12 16 20 20 0 25 50 75 100 125 150 175 VGS |
|
|
|
|
International Rectifier |
POWER MOSFET THRU-HOLE (TO-254AA) n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EA |
|
|
|
|
International Rectifier |
POWER MOSFET N-CHANNEL s s s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight Absolute Maximum Ratings Parameter I D @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD |
|
|
|
|
International Rectifier |
HEXFET Power MOSFET |
|
|
|
|
International Rectifier |
POWER MOSFET N-CHANNEL s s s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight Absolute Maximum Ratings Parameter I D @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD |
|
|
|
|
International Rectifier |
POWER MOSFET N-CHANNE n n n n n Hermetically sealed Electrically isolated Simple Drive Requirements Ease of Paralleling Ceramic eyelets Absolute Maximum Ratings Parameter I D @ VGS=10V, TC = 25°C I D @ VGS=10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ Tst |
|
|
|
|
International Rectifier |
Power MOSFET n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Ideally Suited For Space Level Applications Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C |
|
|
|
|
International Rectifier |
Power MOSFET ID, Drain Current (A) 6.0 ID = 50A 5.0 4.0 TJ = 125°C 3.0 2.0 TJ = 25°C 1.0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com © 2015 International Rectifier 200 150 Limited By Pac |
|
|
|
|
International Rectifier |
POWER MOSFET n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Glass Eyelets n For Space Level Applications Refer to Ceramic Version Part Numbers IRFY440C, IRFY440CM Absolute Maximum Ratings Parameter ID @ VGS = |
|