| No. | Partie # | Fabricant | Description | Fiche Technique |
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International Rectifier |
25 and 35 Amp RMS SCRs |
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International Rectifier |
25 and 35 Amp RMS SCRs |
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International Rectifier |
25 and 35 Amp RMS SCRs |
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International Rectifier |
SMPS MOSFET on Boost Notes through are on page 8 www.irf.com 1 12/15/99 IRFP22N50A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Co |
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International Rectifier |
Power MOSFET /ns °C 10lb*in (1.1N*m) Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. – – – – – – – – – Max. 450 32 46 Units mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJ |
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International Rectifier |
HEXFET Power MOSFET °C 10lb*in (1.1N*m) Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. – – – – – – – – – Max. 450 32 46 Units mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Pa |
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International Rectifier |
HEXFET Power MOSFET 8 www.irf.com 1 2/16/00 IRFBL12N50A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage |
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International Rectifier |
Power MOSFET 0lb*in (1.1N*m) Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambie |
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International Rectifier |
25 and 35 Amp RMS SCRs |
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International Rectifier |
Power MOSFET ull Bridge Converters Power Factor Correction Boost Notes through are on page 8 www.irf.com 1 12/12/00 IRFBA22N50A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltag |
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International Rectifier |
Power MOSFET ull Bridge Converters Power Factor Correction Boost Notes through are on page 8 www.irf.com 1 12/12/00 IRFBA22N50A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltag |
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International Rectifier |
Power MOSFET eter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 32 – – – – – – showing the A G inte |
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International Rectifier |
POWER MOSFET Topologies: l Full Bridge Converters l Power Factor Correction Boost Notes through are on page 8 www.irf.com 1 09/15/04 IRFBA22N50APbF Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Sou |
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