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International Rectifier |
RADIATION HARDENED POWER MOSFET THRU-HOLE n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12 |
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International Rectifier |
RADIATION HARDENED POWER MOSFET THRU-HOLE n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V |
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International Rectifier |
35/40/and 60 Amp Power Silicon Rectifier Diodes |
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International Rectifier |
3-PHASE BRIDGE DRIVER • Floating channel designed for bootstrap operation • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels Over-current shutdown tu |
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International Rectifier |
Power MOSFET of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a w |
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International Rectifier |
Power MOSFET of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a w |
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International Rectifier |
RADIATION HARDENED POWER MOSFET THRU-HOLE n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V |
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International Rectifier |
3-PHASE BRIDGE DRIVER • Floating channel designed for bootstrap operation • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels Over-current shutdown tu |
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International Rectifier |
THREE PHASE BRIDGE Package fully compatible with the industry standard INT-Apak power modules series High thermal conductivity package, electrically insulated case Outstanding number of power encapsulated components Excellent power volume ratio, outline for easy connec |
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International Rectifier |
THREE PHASE BRIDGE Package fully compatible with the industry standard INT-Apak power modules series High thermal conductivity package, electrically insulated case Outstanding number of power encapsulated components Excellent power volume ratio, outline for easy connec |
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International Rectifier |
N-Channel Power MOSFET Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Curr |
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International Rectifier |
Power MOSFET of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a w |
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International Rectifier |
SCHOTTKY RECTIFIER The MBRS130LTR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, bat |
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International Rectifier |
RADIATION HARDENED POWER MOSFET n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = |
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International Rectifier |
RADIATION HARDENED POWER MOSFET THRU-HOLE n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V |
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International Rectifier |
3-PHASE DRIVER n Hermetic n Floatingchanneldesignedforbootstrap 3-PHASE DRIVER Product Summary VOFFSET IO+/VOUT ton/off (typ.) Deadtime (typ.) 400V max. 200 mA / 420 mA 10 - 20V 675 & 425 ns 0.9 µs n n n n n n operation Fully operational to +400V Tolerant to neg |
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International Rectifier |
RADIATION HARDENED POWER MOSFET ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V |
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International Rectifier |
(IRHY5x130CM) RADIATION HARDENED POWER MOSFET n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C |
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International Rectifier |
(IRHY5x130CM) RADIATION HARDENED POWER MOSFET n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C |
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International Rectifier |
Flipky z z z z z Ultra Low VF per Footprint Area Low Thermal Resistance One-fifth Footprint of SMA Super Low Profile (<.8mm) Available Tested on Tape & Reel FlipkyTM Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM |
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