No. | Partie # | Fabricant | Description | Fiche Technique |
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Intel |
SMART 5 BOOT BLOCK MEMORY Absolute Hardware-Protection for Boot Block Write Lockout during Power Transitio |
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Intel |
4-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY |
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Intel |
SMART 3 FlashFile MEMORY Absolute Protection with VPP = GND Flexible Block Locking Block Write Lockout during Power Transitions n Enhanced Automated Suspend Options Program Suspend to Read Block Erase Suspend to Program Block Erase Suspend to Read n Industry-Stan |
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Intel |
8-MBIT (1-MBIT x 8) FlashFile MEMORY Erase Write Lockout during Power Transitions Y Industry Standard Packaging 40-Lead TSOP 44-Lead PSOP Y ETOX III Nonvolatile Flash Technology 12V Byte Write Block Erase Intel’s 28F008SA 8-Mbit FlashFileTM Memory is the highest density nonvolatile rea |
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Intel Corporation |
(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory s s s s s s s s The 3 Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 µ technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+ Boot Block Flash memory devices incorporate low volta |
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Intel |
SMART 5 BOOT BLOCK MEMORY Absolute Hardware-Protection for Boot Block Write Lockout during Power Transitio |
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Intel |
4-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY |
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Intel |
4-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY |
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Intel |
4-MBIT BOOT BLOCK FLASH MEMORY 1 mA Typical ICC Active Current in Static Operation Y Very High-Performance Read 60 80 120 ns Maximum Access Time 30 40 40 ns Maximum Output Enable Time Y Low Power Consumption 20 mA Typical Active Read Current Y Reset Deep Power |
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Intel |
2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY |
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Intel |
SmartVoltage FlashFile MEMORY Absolute Protection with VPP = GND Flexible Block Locking Block Write Lockout during Power Transitions n Enhanced Automated Suspend Options Program Suspend to Read Block Erase Suspend to Program Block Erase Suspend to Read n Industry-Stan |
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Intel |
SMART 3 FlashFile MEMORY Absolute Protection with VPP = GND Flexible Block Locking Block Write Lockout during Power Transitions n Enhanced Automated Suspend Options Program Suspend to Read Block Erase Suspend to Program Block Erase Suspend to Read n Industry-Stan |
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Intel |
SMART 5 FlashFile MEMORY Absolute Protection with VPP = GND Flexible Block Locking Block Write Lockout during Power Transitions n Enhanced Automated Suspend Options Program Suspend to Read Block Erase Suspend to Program Block Erase Suspend to Read n Industry-Stan |
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Intel |
SMART 5 FlashFile MEMORY Absolute Protection with VPP = GND Flexible Block Locking Block Write Lockout during Power Transitions n Enhanced Automated Suspend Options Program Suspend to Read Block Erase Suspend to Program Block Erase Suspend to Read n Industry-Stan |
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Intel |
2-MBIT BOOT BLOCK FLASH MEMORY 1 mA Typical ICC Active Current in Static Operation Y Hardware Data Protection Feature Erase Write Lockout during Power Transitions Y Very High-Performance Read 60 80 120 ns Maximum Access Time 30 40 40 ns Maximum Output Enable Time |
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Intel Corporation |
(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V VPP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option — Reduces overall system power • High Performance — 2.7 V – 3.6 V: 70 ns max access time • Optim |
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Intel Corporation |
(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory s s s s s s s s The 3 Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 µ technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+ Boot Block Flash memory devices incorporate low volta |
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Intel Corporation |
(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory s s s s s s s s The 3 Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 µ technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+ Boot Block Flash memory devices incorporate low volta |
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Intel Corporation |
(TE28FxxxP30) Strata Flash Embedded Memory ■ High performance ■ Security — 85/88 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to • 64 user-programmable OTP bits data output synchronous-burst read mod |
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Intel Corporation |
Intel StrataFlash Memory (J3) Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed — Multi-Level Cell Technology: High — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads |
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