Intel Corporation TE2 fiche technique

No.	Partie #	Fabricant	Description
1	TE28F800C3	Intel Corporation	(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory s s s s s s s s The 3 Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 µ technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+ Boot Block Flash memory devices incorporate low volta
2	TE28F320B3	Intel Corporation	(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V VPP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option — Reduces overall system power • High Performance — 2.7 V – 3.6 V: 70 ns max access time • Optim
3	TE28F640C3	Intel Corporation	(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory s s s s s s s s The 3 Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 µ technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+ Boot Block Flash memory devices incorporate low volta
4	TE28F320C3	Intel Corporation	(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory s s s s s s s s The 3 Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 µ technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+ Boot Block Flash memory devices incorporate low volta
5	TE28F128P30	Intel Corporation	(TE28FxxxP30) Strata Flash Embedded Memory ■ High performance ■ Security — 85/88 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to • 64 user-programmable OTP bits data output synchronous-burst read mod
6	TE28F128J3A	Intel Corporation	Intel StrataFlash Memory (J3) Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed — Multi-Level Cell Technology: High — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads
7	TE28F640B3	Intel Corporation	(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V VPP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option — Reduces overall system power • High Performance — 2.7 V – 3.6 V: 70 ns max access time • Optim
8	TE28F400B3	Intel Corporation	(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory s s s s s s s s s s s The 3 Volt Advanced Boot Block flash memory, manufactured on Intel’s latest 0.18 µm technology, represents a feature-rich solution at overall lower system cost. The 3 Volt Advanced Boot Block flash memory products in x
9	TE28F800B3	Intel Corporation	3 Volt Advanced Boot Block Flash Memory • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V VPP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option — Reduces overall system power • High Performance — 2.7 V – 3.6 V: 70 ns max access time • Optim
10	TE28F160B3	Intel Corporation	(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V VPP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option — Reduces overall system power • High Performance — 2.7 V – 3.6 V: 70 ns max access time • Optim
11	TE28F160C3	Intel Corporation	(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory s s s s s s s s The 3 Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 µ technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+ Boot Block Flash memory devices incorporate low volta
12	TE28F640P30	Intel Corporation	(TE28FxxxP30) Strata Flash Embedded Memory ■ High performance ■ Security — 85/88 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to • 64 user-programmable OTP bits data output synchronous-burst read mod
13	TE28F256P30	Intel Corporation	(TE28FxxxP30) Strata Flash Embedded Memory ■ High performance ■ Security — 85/88 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to • 64 user-programmable OTP bits data output synchronous-burst read mod
14	TE28F640J3C	Intel Corporation	Strata Flash Memory Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed — Multi-Level Cell Technology: High — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads
15	TE28F320J3C	Intel Corporation	Strata Flash Memory Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed — Multi-Level Cell Technology: High — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads
16	TE28F256J3C	Intel Corporation	Strata Flash Memory Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed — Multi-Level Cell Technology: High — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads
17	TE28F320J3	Intel Corporation	(TE28FxxxJ3) Strata Flash Memory Datasheet ■ Performance ■ Architecture — 110/115/120/150 ns Initial Access Speed — Multi-Level Cell Technology: High — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads