Intel Corporation 28F fiche technique

No.	Partie #	Fabricant	Description
1	DA28F016SA-100	Intel Corporation	28F016SA 16-MBIT (1 MBIT X 16/ 2 MBIT X 8)FlashFile MEMORY include: • • • • • • Page Buffer Writes to Flash Command Queueing Capability Automatic Data Programs during Erase Software Locking of Memory Blocks Two-Byte Systems Successive Programs in 8-bit INTRODUCTION The documentation of the Intel 28F016SA m
2	PH28F640L18	Intel Corporation	(PH28FxxxL18) StrataFlash Wireless Memory High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode — 4-, 8-, 16-, and continuous-word burst mode — Burst suspend — Programmable
3	JS28F640J3D-75	Intel Corporation	Numonyx Embedded Flash Memory ■ ■ Architecture — High-density symmetrical 128-Kbyte blocks —128 Mbit (128 blocks) —64 Mbit (64 blocks) —32 Mbit (32 blocks) Performance — 75 ns Initial Access Speed (128/64/32 -Mbit densities) — 25 ns 8-word and 4-word Asynchronous page-mode read
4	28F256P30B	Intel Corporation	Intel StrataFlash Embedded Memory ■ High performance ■ Security — 85/88 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to • 64 user-programmable OTP bits data output synchronous-burst read mod
5	28F160C3	Intel Corporation	3 Volt Advanced+ Boot Block Flash Memory ■ ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V – 3.6 V Read/Program/Erase — 12 V for Fast Production Programming 1.65 V –2.5 V or 2.7 V –3.6 V I/O Option — Reduces Overall System Power High Performance — 2.7 V – 3.6 V: 70 ns Max Access Time
6	DD28F032SA	Intel Corporation	32-MBIT (2 MBIT X 16/ 4 MBIT X 8) FlashFile MEMORY include: • Page Buffer Writes to Flash • Command Queueing Capability • Automatic Data Programs during Erase • Software Locking of Memory Blocks • Two-Byte Systems Successive Programs in 8-bit 1.0 PRODUCT OVERVIEW The DD28F032SA is a high-performance
7	TN28F512-120	Intel Corporation	512K(64Kx8)CMOS FLASH MEMORY
8	TE28F800C3	Intel Corporation	(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory s s s s s s s s The 3 Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 µ technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+ Boot Block Flash memory devices incorporate low volta
9	PC28F640P30	Intel Corporation	Intel StrataFlash Embedded Memory ■ High performance ■ Security — 85/88 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to • 64 user-programmable OTP bits data output synchronous-burst read mod
10	28F128J3A	Intel Corporation	(28FxxxJ3A) Intel StrataFlash Memory s s s s s High-Density Symmetrically-Blocked Architecture — 128 128-Kbyte Erase Blocks (128 M) — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) High Performance Interface Asynchronous Page Mode Reads — 110/25 ns Read Access T
11	JS28F256P30T85	Intel Corporation	Intel StrataFlash Embedded Memory ■ High performance ■ Security — 85/88 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to • 64 user-programmable OTP bits data output synchronous-burst read mod
12	JS28F128J3A	Intel Corporation	Intel StrataFlash Memory ■ ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads (256Mbit density only) — 32-Byte Write Buffer —6.8 µs per b
13	28F256L30	Intel Corporation	(28FxxxL30) Wireless Memory ■ High performance Read-While-Write/Erase — 85 ns initial access — 52MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode — 25 ns asynchronous-page mode — 4-, 8-, 16-, and continuous-word burst mode — Burst suspend — Programma
14	28F256L18	Intel Corporation	(28FxxxL18) StrataFlash Wireless Memory High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode — 4-, 8-, 16-, and continuous-word burst mode — Burst suspend — Programmable
15	A28F010	Intel Corporation	1024K (128K x 8) CMOS FLASH MEMORY g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX TM III Flash Nonvolatile Memory Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience JEDEC-Standard Pinouts 32-Pin Plastic DIP 32-Lead PLCC (See Packag
16	DA28F016XS15	Intel Corporation	16-MBIT (1 MBIT x 16/ 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY • All page buffer operations (read, write, programming, Upload Device Information) • Command queuing • Software Sleep and Abort • Erase all Unlocked Blocks and Two-Byte Write • RY/BY# Configuration as part of the Device Configuration command Changed
17	TE28F320B3	Intel Corporation	(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V VPP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option — Reduces overall system power • High Performance — 2.7 V – 3.6 V: 70 ns max access time • Optim
18	TE28F640C3	Intel Corporation	(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory s s s s s s s s The 3 Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 µ technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+ Boot Block Flash memory devices incorporate low volta
19	TE28F320C3	Intel Corporation	(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory s s s s s s s s The 3 Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 µ technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+ Boot Block Flash memory devices incorporate low volta
20	TE28F128P30	Intel Corporation	(TE28FxxxP30) Strata Flash Embedded Memory ■ High performance ■ Security — 85/88 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to • 64 user-programmable OTP bits data output synchronous-burst read mod