No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
National Semiconductor |
Integrated Power Supply 1A DC-DC Converter n n n n n n n n n n n Minimum design time required 3.3V, 5V and 12V fixed output versions Two adjustable versions allow 1.23V to 15V outputs Wide input voltage range, up to 40V Low-power standby mode, IQ typically 65 µA High efficiency, typically 80% |
|
|
|
Fairchild Semiconductor |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features • –3.3 A, –20V RDS(ON) = 125 mΩ @ VGS = –10 V RDS(ON) = 200 mΩ |
|
|
|
Integrated Power Semiconductors |
(ULN2xxx) Darlington Transistor Arrays |
|
|
|
Lii Semiconductor |
AC / DC Switching power supply controller integrated : DMIN DMAX VFB=0V VFB>4.5V 55 1.5 60 65 % % : VTH ILIMIT GVCC TILD TLEB Rs=1Ω 0.65 0.65 0.70 0.70 60 150 500 0.75 0.75 70 250 V A dB nS nS : IFB RFB GVCC VCC=5-9V 0.75 30 60 70 mA KΩ dB : IST IQ VST VSTOP VRST VSZ |
|
|
|
Integrated Power Semiconductors |
1.5 Amp Quad Darlington Arrays |
|
|
|
Integrated Power Semiconductors |
1.5 Amp Quad Darlington Arrays |
|
|
|
Freescale Semiconductor |
PowerQUICC III Integrated Processor – MAC address recognition and RMON statistics support – Support ARP parsing and generating wake-up events based on the parsing results while in deep sleep mode – Support accepting and storing packets while in deep sleep mode High-speed interfaces (mu |
|
|
|
Integrated Power Semiconductors |
(ULN2xxx) Darlington Transistor Arrays |
|
|
|
Integrated Power Semiconductors |
(ULN2xxx) Darlington Transistor Arrays |
|
|
|
Integrated Power Semiconductors |
(ULN2xxx) Darlington Transistor Arrays |
|
|
|
National Semiconductor |
Processor Series Low Power Integrated x86 Solution such as operand forwarding, branch target buffers, and extensive write buffering. Accesses to the 16 KB write-back L1 cache are dynamically reordered to eliminate pipeline stalls when fetching operands. Features General Features Packagin |
|
|
|
National Semiconductor |
Processor Series Low Power Integrated x86 Solution such as operand forwarding, branch target buffers, and extensive write buffering. Accesses to the 16 KB write-back L1 cache are dynamically reordered to eliminate pipeline stalls when fetching operands. Features General Features Packagin |
|
|
|
Integrated Power Semiconductors |
1.5 Amp Quad Darlington Arrays |
|
|
|
Integrated Power Semiconductors |
1.5 Amp Quad Darlington Arrays |
|
|
|
Integrated Power Semiconductors |
(ULN2xxx) Darlington Transistor Arrays |
|
|
|
Integrated Power Semiconductors |
(ULN2xxx) Darlington Transistor Arrays |
|
|
|
Integrated Power Semiconductors |
(ULN2xxx) Darlington Transistor Arrays |
|
|
|
Integrated Power Semiconductors |
(ULS2xxx) Darlington Transistor Arrays |
|
|
|
International Rectifier |
Synchronous Buck Multiphase Optimized LGA Power Block Integrated Power Semiconductors Integrated Power Semiconductors, Drivers & Passives Full function multiphase building block Output current 40A continuous with no derating up to TPCB = 100°C and TCASE = 100°C Operating frequency up to 1.0 MHz Proprietary packag |
|
|
|
Fairchild Semiconductor |
Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description MOSFET Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A HBM ESD protection level > 2kV (Note 3) Schottky VF < 0.37V @ 500mA Low profile - 0.8 mm maximum - in the new package Micro |
|