Innogration MR2 fiche technique

No.	Partie #	Fabricant	Description
1	MR2006C	Innogration	High Power RF LDMOS FET  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Excellent thermal stability, low HCI drift  Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation  Pb-free, RoHS-compliant Suitable Applicat
2	MR2003C	Innogration	High Power RF LDMOS FET  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Excellent thermal stability, low HCI drift  Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation  Pb-free, RoHS-compliant Suitable Applicat
3	MR2002C	Innogration	High Power RF LDMOS FET  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Excellent thermal stability, low HCI drift  Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation  Pb-free, RoHS-compliant Suitable Applicat