Innogration MQ1 fiche technique

No.	Partie #	Fabricant	Description
1	MQ1080VP	Innogration	High Power RF LDMOS FET  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Internally Matched for Ease of Use  La
2	MQ1270VP	Innogration	High Power RF LDMOS FET  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Internally Matched for Ease of Use  Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation  Excellent thermal stability, low HCI drift  Compli
3	MQ1470VP	Innogration	High Power RF LDMOS FET  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Internally Matched for Ease of Use  Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation  Excellent thermal stability, low HCI drift  Compli
4	MQ1090VP	Innogration	High Power RF LDMOS FET  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Internally Matched for Ease of Use  Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation  Excellent thermal stability, low HCI drift  Compli