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Innogration MM1 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
MM1001

Innogration
High Power RF LDMOS FET

 High Efficiency and Linear Gain Operations
 Integrated ESD Protection
 Excellent thermal stability, low HCI drift Suitable Applications
 2-30MHz (HF or Short wave communication)
 30-88MHz (Ground communication)
 54-88MHz (TV VHF I)
 88-108MHz
Datasheet
2
MM10R5

Innogration
High Power RF LDMOS FET

 High Efficiency and Linear Gain Operations
 Integrated ESD Protection
 Excellent thermal stability, low HCI drift
 Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
 Pb-free, RoHS-compliant Suitable Applicat
Datasheet



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