Infineon Technologies SPW fiche technique

No.	Partie #	Fabricant	Description
1	47N60C3	Infineon Technologies	SPW47N60C3 11 Please note the new package dimensions arccording to PCN 2009-134-A 63:1& 0D[LPXP5DWLQJV 3DUDPHWHU 'UDLQ6RXUFHYROWDJHVORSH VDS 9,' $Tj & 7KHUPDO&KDUDFWHULVWLFV 3DUDPHWHU 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH 7KHUP
2	SPW20N60S5	Infineon Technologies	Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS RDS(on) ID 600 0.19 20 P-TO247 V Ω A Type SPW20N60S5 Package
3	SPW47N65C3	Infineon Technologies	Power Transistor • Worldwide best R ds,on in TO247 • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max Q g,typ SPW47
4	SPW11N60CFD	Infineon Technologies	Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme d v/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge VDS @ Tjmax RDS(on) ID 650
5	SPW20N60CFD	Infineon Technologies	Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme d v/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge VDS @ Tjmax RDS(on) ID 650
6	SPW20N60C2	Infineon Technologies	Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity Product Summary VDS RDS(on) ID 600 0.19 20 P-TO247 V Ω A Type SPW20N60
7	SPW21N50C3	Infineon Technologies	Power Transistor 0D[LPXP5DWLQJV 3DUDPHWHU 'UDLQ6RXUFHYROWDJHVORSH VDS 9,' $Tj & 6\PERO GYGW 9DOXH 8QLW 9QV 7KHUPDO&KDUDFWHULVWLFV 3DUDPHWHU 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH 7KHUPDOUHVLVWDQFHMXQFWLRQDPELHQWOHDGHG 6ROGH
8	SPW11N80C3	Infineon Technologies	Cool MOS Power Transistor • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitance
9	SPW11N60C3	Infineon Technologies	Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance V Ω A Type SPW11N60C3 Package P-TO247 Ordering Code Q67040-S4418 Mark
10	SPW11N60C2	Infineon Technologies	Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity Product Summary VDS RDS(on) ID 600 0.38 11 P-TO247 V Ω A Type SPW11N60
11	SPW52N50C3	Infineon Technologies	Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPW52N50C3 VDS @ Tjmax 560 V RD
12	SPW47N60S5	Infineon Technologies	Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 V Ω A • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type SPW47N60S5 Package P
13	SPW47N60C3	Infineon Technologies	Cool MOS Power Transistor 11 Please note the new package dimensions arccording to PCN 2009-134-A 63:1& 0D[LPXP5DWLQJV 3DUDPHWHU 'UDLQ6RXUFHYROWDJHVORSH VDS 9,' $Tj & 7KHUPDO&KDUDFWHULVWLFV 3DUDPHWHU 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH 7KHUP
14	SPW47N60C2	Infineon Technologies	Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 Product Summary VDS RDS(on) ID 600 0.07 47 P-TO247 V Ω A • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • I
15	SPW32N50C3	Infineon Technologies	Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS @ Tjmax RDS(on) ID 560 0.11 32 P-TO247 V Ω A Type SPW32N50C3
16	SPW24N60C3	Infineon Technologies	Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances • Improved transconductance Product Summary V DS @ T j,max R DS(on),max ID 650 0.16 24.3 V Ω A
17	SPW11N60S5	Infineon Technologies	Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS RDS(on) ID 600 0.38 11 P-TO247 V Ω A Type SPW11N60S5 Package
18	SPW35N60C3	Infineon Technologies	Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances • Improved transconductance Product Summary V DS @ T j,max R DS(on),max ID SPW35N60C3 650 V 0.1
19	SPW20N60C3	Infineon Technologies	Cool MOS Power Transistor ease note the new package dimensions arccording to PCN 2009-134-A 63:1& 0D[LPXP5DWLQJV 3DUDPHWHU 'UDLQ6RXUFHYROWDJHVORSH VDS 9,' $Tj & 7KHUPDO&KDUDFWHULVWLFV 3DUDPHWHU 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH 7KHUPDOUH
20	SPW17N80C3	Infineon Technologies	Power Transistor • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitance