| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies |
IKW30N60T Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Frequency Converters - Uninterruptible Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - ve |
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Infineon Technologies |
IKW25T120 Maximum Ratings Parameter Symbol Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Di |
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Infineon Technologies |
IGBT 20 Maximum Ratings Parameter Symbol Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C |
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Infineon Technologies |
IGBT |
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Infineon Technologies |
IGBT C TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •comp |
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Infineon Technologies |
IGBT andBenefits: C LowVCE(sat)L5technologyoffering •Verylowcollector-emittersaturationvoltageVCEsat •Best-in-Classtradeoffbetweenconductionandswitchinglosses •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature |
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Infineon Technologies |
IGBT 120 Maximum Ratings Parameter Symbol Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C |
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Infineon Technologies |
IGBT Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very |
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Infineon Technologies |
IGBT Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Frequency Converters - Uninterruptible Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - ve |
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Infineon Technologies |
IGBT andBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowQg •IGBTcopackedwithRAPID1fastan |
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Infineon Technologies |
IGBT C TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •comp |
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Infineon Technologies |
IGBT andBenefits: C LowVCE(sat)L5technologyoffering •Verylowcollector-emittersaturationvoltageVCEsat •Best-in-Classtradeoffbetweenconductionandswitchinglosses •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature |
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Infineon Technologies |
IGBT andBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQg •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature |
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Infineon Technologies |
IGBT Maximum Ratings Parameter Symbol Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Di |
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Infineon Technologies |
HighSpeed 2-Technology temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -40...+150 260 225 (for SMD) °C VGE Ptot IF 9.6 3.9 ±20 62.5 V W ICpuls Symbol VCE IC 9.6 3.9 9.9 9.9 Value 1200 Unit V A VCE 1200V 1200V 1200V IC 3A 3A 3A Eoff 0.15mJ 0.15mJ 0.15mJ Tj 150°C |
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Infineon Technologies |
IGBT Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very |
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Infineon Technologies |
IGBT Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs Diode forward current, limited by Tjmax Diode pulsed current, tp limited by Tjmax TC = 25C TC = 100C Gate-emitter voltage Short circui |
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Infineon Technologies |
IGBT C TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •comp |
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Infineon Technologies |
IGBT |
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Infineon Technologies |
IGBT TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •complete |
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