| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies |
Reverse conducting IGBT "& 2 T &3 "93"& 3 6#2 99 13T ?"9 9 &"=" 7 122 &31 122 &31 4"33 4"33 8 !71?# 123 $ V[\X ] E E 4+ + . ,. @ . + . . E E O, B+ . E + * #1# #+ K ` . 9 36 3"1# 123 $ E 5"17 =1 ? 7 123 $ / 3 4"33 3T 9T127 123 $ 123 $ &122 &31 &6 2 ! $ &6 9"93 |
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Infineon Technologies |
Reverse conducting IGBT "& 2 T &3 "93"& 3 6#2 99 13T ?"9 9 &"=" 7 122 &31 122 &31 4"33 4"33 8 !71?# 123 $ V[\X ] E E 4+ + . ,. @ . + . . E E O, B+ . E + * #1# #+ K ` . 9 36 3"1# 123 $ E 5"17 =1 ? 7 123 $ / 3 4"33 3T 9T127 123 $ 123 $ &122 &31 &6 2 ! $ &6 9"93 |
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Infineon Technologies |
Reverse conducting IGBT • Powerful monolithic body diode with very low forward voltage • Body diode clamps negative voltages • Trench and fieldstop technology offers: - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers |
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