| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies |
IHW15N120R • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop ® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable b |
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Infineon Technologies |
IGBT •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparall |
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Infineon Technologies |
Reverse Conducting IGBT • 1.5V Forward voltage of monolithic body Diode • Full Current Rating of monolithic body Diode • Specified for TJmax = 175°C • Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, te |
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Infineon Technologies |
Reverse Conducting IGBT • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavio |
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Infineon Technologies |
Reverse Conducting IGBT • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavio |
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Infineon Technologies |
Low Loss DuoPack • 1.1V Forward voltage of antiparallel rectifier diode • Specified for TJmax = 175°C • TrenchStop® and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy pa |
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Infineon Technologies AG |
Soft Switching Series current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter voltage Short circuit withstand time 1) |
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Infineon Technologies |
Reverse Conducting IGBT • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavio |
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Infineon Technologies |
IGBT in Trench and Fieldstop technology 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax, Tc=25°C Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter vo |
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Infineon Technologies |
IGBT • Powerful monolithic Body Diode • Specified for TJmax = 175°C • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy paralle |
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Infineon Technologies |
IGBT • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature sta |
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Infineon Technologies |
Reverse Conducting IGBT • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive tempe |
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Infineon Technologies |
IGBT • 1.1V Forward voltage of antiparallel diode • TrenchStop® and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positi |
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Infineon Technologies |
IGBT • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V applications G E offers : - very tight parameter distribution - high ruggedness, tem |
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Infineon Technologies |
IGBT 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter voltage Sho |
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Infineon Technologies |
IGBT •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparall |
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Infineon Technologies |
IGBT •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat •LowEMI •Q |
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