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Infineon Technologies |
IGBT Tstg -40...+150 260 225 (for SMD) °C VGE Ptot ±20 28 V W ICpuls Symbol VCE IC 3.2 1.3 3.5 3.5 Value 1200 Unit V A VCE 1200V 1200V 1200V IC 1A 1A 1A Eoff 0.09mJ 0.09mJ 0.09mJ Tj 150°C 150°C 150°C Package P-TO-220-3-1 P-TO-263 (D PAK) P-TO-252 (DPAK) 2 |
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Infineon Technologies |
IGBT |
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Infineon Technologies |
IGP30N60T lector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) Gate-emitter voltage Short circuit withstand time 1) Symbol VCE IC Value 600 60 30 Unit V A ICpuls VGE tSC Ptot Tj Tstg - 90 90 ±20 5 187 -40...+175 -55... |
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