| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies |
IGBT • 1.1V Forward voltage of antiparallel diode • TrenchStop® and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positi |
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Infineon Technologies |
IGBT • 1.1V Forward voltage of antiparallel rectifier diode • Specified for TJmax = 175°C • TrenchStop® and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy pa |
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Infineon Technologies |
Reverse Conducting IGBT • 1.5V Forward voltage of monolithic body Diode • Full Current Rating of monolithic body Diode • Specified for TJmax = 175°C • Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, te |
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