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Infineon Technologies |
Low profile robust silicon NPN RF bipolar transistor list • Minimum noise figure NFmin = 0.9 dB at 1.8 GHz, 2 V, 5 mA • High gain Gms = 20 dB at 1.8 GHz, 2 V, 20 mA • OIP3 = 24.5 dBm at 1.8 GHz, 2 V, 20 mA • High ESD robustness, typical 1 kV (HBM) Product validation Qualified for industrial applicatio |
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Infineon Technologies AG |
Ultra-Low Capacitance TVS Diode rking P 1 2009-06-18 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ESD5V0H1U-02LS Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol VESD T op T stg Value Unit ESD contact discharge1) Operating temperatur |
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Infineon Technologies AG |
Transient Voltage Suppressor Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon Technologies |
Silicon TVS Diodes ange Top Storage temperature Tstg Value 30 40 600 -55...125 -65...150 Unit kV A W °C Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. Characteristics - Reverse working voltage Brea |
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Infineon Technologies |
(ESD5V0SxUS) Multi-Channel TVS Diode Array |
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Infineon Technologies |
(ESD5V0SxUS) Multi-Channel TVS Diode Array |
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Infineon Technologies |
TVS Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon Technologies |
(ESD5V0SxUS) Multi-Channel TVS Diode Array r Symbol ESD contact discharge per diode1) Peak pulse current (tp = 8 / 20 µs) per diode2) Peak pulse power (tp = 8 / 20 µs) per diode VESD Ipp Ppk Operating temperature range Top Storage temperature Tstg Value 30 10 130 -55...125 -65...150 |
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Infineon Technologies AG |
Low Capacitance TVS Diode ss otherwise specified Parameter Symbol VESD I pp T op T stg Value Unit ESD (air / contact) discharge 1) Peak pulse current (tp = 8 / 20 µs)2) Operating temperature range Storage temperature 30 6 -55...125 -65...150 kV A °C Electrical Characteris |
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Infineon Technologies |
Silicon TVS Diode imum Ratings at TA = 25°C, unless otherwise specified Parameter ESD air / contact discharge 1) Peak pulse current ( tp = 8 / 20 µs)2) Peak pulse power (tp = 8 / 20 µs2) Operating temperature range Storage temperature Symbol VESD I pp Ppk T op T stg V |
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Infineon Technologies |
Silicon TVS Diode goods. ESD5V3S1U-02LRH 1 2 Type ESD5V3S1U-02LRH Package TSLP-2-17 Configuration 1 line, uni-directional 1 Marking E2 2009-12-07 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ESD5V3S1U-02LRH Maximum Ratings at TA = 25°C, unl |
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Infineon Technologies |
Transient Voltage Suppressor Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1.2 Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon Technologies AG |
Ultra-Low Capacitance ESD Diode Array ings at TA = 25°C, unless otherwise specified Parameter Symbol ESD contact discharge1) Peak pulse current (tp = 8 / 20 µs)2) Peak pulse power (tp = 8 / 20 µs)2) VESD Ipp Ppk Operating temperature range Top Storage temperature Tstg Value 15 3 |
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Infineon Technologies |
Microphone Filter and ESD Protection • Microphone filter • Integrated ESD protection up to 15 kV • Low input impedance • More than 30 dB stopband attenuation • Ideal for GSM/UMTS • Wafer Level Package with SnAgCu-Bumps WLP-8-1,- 2, -4 A3 B1 C1 B2 B3 C2 C3 A2 BGF200_Blockdiagram.vsd |
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Infineon Technologies |
Low Capacitance TVS Diode Marking B3 B3 on request 1 2009-07-07 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol ESD contact discharge1) ESD8V0L1B-02LRH VESD ESD8V0L2B..., between all pins Peak pulse current (tp = 8 / 20 µs)2) ESD8V0L1B-02LR |
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Infineon Technologies AG |
Transient Voltage Suppressor Diodes |
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