| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies AG |
SIPMOS Small Signal Transistor • N-Channel • Enhancement mode • Logic level • dv /dt rated Product Summary V DS R DS(on),max ID 240 14 0.1 V Ω A SOT-23 Type BSS131 BSS131 Package SOT23 SOT23 Ordering Code Q62702-S565 Q67000-S229 Tape and Reel Information E6327 E6433 Marking |
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Infineon Technologies |
Small-Signal-Transistor • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant; Halogen free BSS119N Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V 100 V 6W 10 0.19 A PG-SOT |
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Infineon Technologies AG |
SIPMOS Small Signal Transistor • N-Channel • Enhancement mode • Logic Level • dv/dt rated Product Summary VDS 100 6 0.17 SOT23 V Ω A RDS(on) ID 3 Drain pin 3 Gate pin1 Source pin 2 2 1 VPS05161 Type BSS123 BSS123 Package SOT23 SOT23 Ordering Code Q62702-S512 Q67000-S245 |
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Infineon Technologies AG |
SIPMOS Small-Signal-Transistor • N-channel • Depletion mode • dv /dt rated Product Summary V DS R DS(on),max I DSS,min 250 30 0.03 V Ω A SOT-23 Type BSS139 Package SOT-23 Ordering Code Q62702-S612 Tape and Reel Information E6327: 3000 pcs/reel Marking STs Maximum ratings, |
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Infineon Technologies AG |
OptiMOS -P Small-Signal-Transistor • P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated Product Summary VDS RDS(on) ID -20 1.2 -0.39 V Ω A PG-SOT-323 3 • Qualified according to AEC Q101 • Halogen-free acco |
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Infineon Technologies AG |
NPN Silicon AF and Switching Transistors lector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 VCB = 100 V, IE = 0 Collector cutoff current VCB = |
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Infineon Technologies AG |
NPN Silicon Switching Transistors min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 60 V, IE = 0 Collector cutoff current |
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Infineon Technologies AG |
NPN Silicon Switching Transistors min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 60 V, IE = 0 Collector cutoff current |
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Infineon Technologies AG |
PNP Silicon Switching Transistors min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 50 V, IE = 0 Collector cutoff current |
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Infineon Technologies AG |
NPN Silicon Switching Transistors min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 60 V, IE = 0 Collector cutoff current |
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Infineon Technologies AG |
SIPMOS Small-Signal-Transistor Product Summary VDS RDS(on) ID 3 · P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated -60 8 -0.17 SOT-23 V W A 2 1 VPS05161 Drain pin 3 Type BSS 84 P Package SOT-23 Ordering Code Q67041-S1417 Marking YBs Gate pin1 |
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Infineon Technologies |
NPN Transistors min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 60 V, IE = 0 Collector cutoff current |
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Infineon Technologies |
SIPMOS Small-Signal Transistor 56 K/W Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 50 - Gate threshold |
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Infineon Technologies |
Small-Signal-Transistor • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100%lead-free; Halogen-free; RoHS compliant BSS606N Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V 60 V 60 mW 90 3.2 A PG-SOT |
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Infineon Technologies |
Small-Signal-Transistor • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 BSS806N Product Summary V DS R DS(on),max ID V GS=2.5 V |
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Infineon Technologies |
Small-Signal-Transistor • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 BSS816NW Product Summary V DS R DS(on),max ID V GS=2.5 |
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Infineon Technologies |
Small-Signal-Transistor • N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 BSS214NW Product Summary V DS R DS(on),max ID V GS=4.5 |
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Infineon Technologies |
Small-Signal-Transistor • n-channel • enhancement mode • Logic level • dv /dt rated • Qualified according to AEC Q101 • Halogenfree according to IEC61249221 Product Summary V DS 1) R DS(on),max ID BSS225 600 V 45 Ω 0.09 A SOT89 Type BSS225 Package SOT89 Pb-free Yes |
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Infineon Technologies |
Small-Signal-Transistor • n-channel • enhancement mode • Logic level (4.5V rated) • dv /dt rated • 100%lead-free; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID BSS127 600 V 500 Ω 0.021 A PG |
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Infineon Technologies |
Small-Signal-Transistor • P-channel • Enhancement mode • Super Logic Level (2.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 BSS215P Product Summary V DS R DS(on),max ID V GS=-4.5 |
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