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Infineon Technologies |
IGBT POWER MODULE M 25 GD 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 1 mA 4.5 5.5 6.5 Collector-emitter saturat |
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Infineon Technologies |
IGBT Module |
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Infineon Technologies |
IGBT Module |
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Infineon Technologies |
IGBT Module |
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