Infineon Technologies B39 fiche technique

No.	Partie #	Fabricant	Description
1	HYB39S256800DC	Infineon Technologies	(HYB39S256xxxD) 256 MBit Synchronous DRAM Programmable Burst Length: 1, 2, 4, 8 and full page Multiple Burst Read with Single Write Operation Automatic Command and Controlled Precharge www.DataSheet4U.com The HYB39S256400/800/160DT(L) are four bank Synchronous DRAM’s organized as 4 banks x
2	HYB39S256160DTL	Infineon Technologies	(HYB39S256xxxD) 256 MBit Synchronous DRAM Programmable Burst Length: 1, 2, 4, 8 and full page Multiple Burst Read with Single Write Operation Automatic Command and Controlled Precharge www.DataSheet4U.com The HYB39S256400/800/160DT(L) are four bank Synchronous DRAM’s organized as 4 banks x
3	HYB39S256400CT	Infineon Technologies	(HYB39S256xxxCT) 256 MBit Synchronous DRAM ial wrap around www.DataSheet4U.com The HYB39S256400/800/160CT(L) are four bank Synchronous DRAM’s organized as 4 banks x 16MBit x4, 4 banks x 8MBit x8 and 4 banks x 4Mbit x16 respectively. These synchronous devices achieve high speed data transfer
4	B39111-B8100-L100	Infineon Technologies	SAW Components Bandpass Filter q q q q q q IF filter for cordless application Channel selection in DECT system Low group delay ripple Surface Mounted Technology (SMT) Standard IC small outline (SO) package Balanced and unbalanced operation possible Terminals q Tinned CuFe alloy
5	HYB39S256160DC	Infineon Technologies	(HYB39S256xxxD) 256 MBit Synchronous DRAM Programmable Burst Length: 1, 2, 4, 8 and full page Multiple Burst Read with Single Write Operation Automatic Command and Controlled Precharge www.DataSheet4U.com The HYB39S256400/800/160DT(L) are four bank Synchronous DRAM’s organized as 4 banks x
6	HYB39S256800DTL	Infineon Technologies	(HYB39S256xxxD) 256 MBit Synchronous DRAM Programmable Burst Length: 1, 2, 4, 8 and full page Multiple Burst Read with Single Write Operation Automatic Command and Controlled Precharge www.DataSheet4U.com The HYB39S256400/800/160DT(L) are four bank Synchronous DRAM’s organized as 4 banks x
7	HYB39S128800CT	Infineon Technologies	128-MBit Synchronous DRAM 7.5 for PC 133 3-3-3 applications -8 for PC100 2-2-2 applications The HYB 39S128400/800/160CT are four bank Synchronous DRAM’s organized as 4 banks × 8MBit x4, 4 banks × 4MBit x8 and 4 banks × 2Mbit x16 respectively. These synchronous devices achiev
8	HYB39S128800CTL	Infineon Technologies	128-MBit Synchronous DRAM 7.5 for PC 133 3-3-3 applications -8 for PC100 2-2-2 applications The HYB 39S128400/800/160CT are four bank Synchronous DRAM’s organized as 4 banks × 8MBit x4, 4 banks × 4MBit x8 and 4 banks × 2Mbit x16 respectively. These synchronous devices achiev
9	HYB39S64800BT	Infineon Technologies	64-MBit Synchronous DRAM uential wrap around The HYB 39S64400/800/160BT are four bank Synchronous DRAM’s organized as 4 banks × 4MBit ×4, 4 banks × 2 MBit ×8 and 4 banks × 1 Mbit ×16 respectively. These synchronous devices achieve high speed data transfer rates by employing
10	HYB39S64400BT	Infineon Technologies	64-MBit Synchronous DRAM uential wrap around The HYB 39S64400/800/160BT are four bank Synchronous DRAM’s organized as 4 banks × 4MBit ×4, 4 banks × 2 MBit ×8 and 4 banks × 1 Mbit ×16 respectively. These synchronous devices achieve high speed data transfer rates by employing
11	HYB39S64160BT	Infineon Technologies	64-MBit Synchronous DRAM uential wrap around The HYB 39S64400/800/160BT are four bank Synchronous DRAM’s organized as 4 banks × 4MBit ×4, 4 banks × 2 MBit ×8 and 4 banks × 1 Mbit ×16 respectively. These synchronous devices achieve high speed data transfer rates by employing
12	HYB39S64800BTL	Infineon Technologies	64-MBit Synchronous DRAM uential wrap around The HYB 39S64400/800/160BT are four bank Synchronous DRAM’s organized as 4 banks × 4MBit ×4, 4 banks × 2 MBit ×8 and 4 banks × 1 Mbit ×16 respectively. These synchronous devices achieve high speed data transfer rates by employing
13	HYB39S64400BTL	Infineon Technologies	64-MBit Synchronous DRAM uential wrap around The HYB 39S64400/800/160BT are four bank Synchronous DRAM’s organized as 4 banks × 4MBit ×4, 4 banks × 2 MBit ×8 and 4 banks × 1 Mbit ×16 respectively. These synchronous devices achieve high speed data transfer rates by employing
14	HYB39S128160CT	Infineon Technologies	128-MBit Synchronous DRAM 7.5 for PC 133 3-3-3 applications -8 for PC100 2-2-2 applications The HYB 39S128400/800/160CT are four bank Synchronous DRAM’s organized as 4 banks × 8MBit x4, 4 banks × 4MBit x8 and 4 banks × 2Mbit x16 respectively. These synchronous devices achiev
15	HYB39S128400CT	Infineon Technologies	128-MBit Synchronous DRAM 7.5 for PC 133 3-3-3 applications -8 for PC100 2-2-2 applications The HYB 39S128400/800/160CT are four bank Synchronous DRAM’s organized as 4 banks × 8MBit x4, 4 banks × 4MBit x8 and 4 banks × 2Mbit x16 respectively. These synchronous devices achiev
16	HYB39S128160CTL	Infineon Technologies	128-MBit Synchronous DRAM 7.5 for PC 133 3-3-3 applications -8 for PC100 2-2-2 applications The HYB 39S128400/800/160CT are four bank Synchronous DRAM’s organized as 4 banks × 8MBit x4, 4 banks × 4MBit x8 and 4 banks × 2Mbit x16 respectively. These synchronous devices achiev
17	HYB39S128400CTL	Infineon Technologies	128-MBit Synchronous DRAM 7.5 for PC 133 3-3-3 applications -8 for PC100 2-2-2 applications The HYB 39S128400/800/160CT are four bank Synchronous DRAM’s organized as 4 banks × 8MBit x4, 4 banks × 4MBit x8 and 4 banks × 2Mbit x16 respectively. These synchronous devices achiev
18	HYB39S256400DC	Infineon Technologies	(HYB39S256xxxD) 256 MBit Synchronous DRAM Programmable Burst Length: 1, 2, 4, 8 and full page Multiple Burst Read with Single Write Operation Automatic Command and Controlled Precharge www.DataSheet4U.com The HYB39S256400/800/160DT(L) are four bank Synchronous DRAM’s organized as 4 banks x
19	HYB39S256160DT	Infineon Technologies	(HYB39S256xxxD) 256 MBit Synchronous DRAM Programmable Burst Length: 1, 2, 4, 8 and full page Multiple Burst Read with Single Write Operation Automatic Command and Controlled Precharge www.DataSheet4U.com The HYB39S256400/800/160DT(L) are four bank Synchronous DRAM’s organized as 4 banks x
20	HYB39S256400DT	Infineon Technologies	(HYB39S256xxxD) 256 MBit Synchronous DRAM Programmable Burst Length: 1, 2, 4, 8 and full page Multiple Burst Read with Single Write Operation Automatic Command and Controlled Precharge www.DataSheet4U.com The HYB39S256400/800/160DT(L) are four bank Synchronous DRAM’s organized as 4 banks x