| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies AG |
IGBT r 10s Tj , Tstg -55...+150 260 °C 1) VCE 1200V IC 2A Eoff 0.11mJ Tj 150°C Package TO-220AB TO-263AB(D2PAK) Ordering Code Q67040-S4278 Q67040-S4279 Symbol VCE IC Value 1200 6.2 2.8 Unit V A ICpul s IF 9.6 9.6 4.5 2 IFpul s VGE tSC Ptot 9 ± |
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Infineon Technologies AG |
Fast IGBT mited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150C Power dissipa |
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Infineon Technologies AG |
Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode 25°C Operating junction and storage temperature Tj , Tstg -55...+150 °C 1) VCE 600V IC 4A VCE(sat) 2.3V Tj 150°C Package TO-220AB TO-263AB Ordering Code Q67040-S4216 Q67040-S4229 Symbol VCE IC Value 600 9.4 4.9 Unit V A ICpul s IF 19 19 1 |
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