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Infineon Technologies AG SGB DataSheet

No. Partie # Fabricant Description Fiche Technique
1
GB02N120

Infineon Technologies AG
SGB02N120
emperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -55...+150 260 °C 1) VCE 1200V IC 2A Eoff 0.11mJ Tj 150°C Package TO-220AB TO-263AB(D2PAK) TO-252AA(DPAK) Ordering Code Q67040-S4270 Q67040-S4271 Q67040-S4269 Symbol VCE IC Value 1200
Datasheet
2
SGB15N60

Infineon Technologies AG
Fast IGBT in NPT-technology
-55...+150 °C 1) VCE 600V IC 15A VCE(sat) 2.3V Tj 150°C Package TO-220AB TO-263AB TO-247AC Ordering Code Q67040-S4508 Q67041-A4711 Q67040-S4235 Symbol VCE IC Value 600 31 15 Unit V A ICpul s VGE EAS 62 62 ±20 85 V mJ tSC Ptot 10 139 µs
Datasheet
3
SGB04N60

Infineon Technologies AG
Fast IGBT in NPT-technology
= 25°C Operating junction and storage temperature Tj , Tstg -55...+150 °C 1) VCE 600V IC 4A VCE(sat) 2.3V Tj 150°C Package TO-220AB TO-263AB TO-252AA(DPAK) TO-251AA(IPAK) Ordering Code Q67040-S4443 Q67040-S4442 Q67041-A4708 Q67040-S4444 Symbol
Datasheet
4
SGB07N120

Infineon Technologies AG
IGBT
Eoff 0.7mJ Tj 150°C Package TO-220AB TO-263AB(D2PAK) Ordering Code Q67040-S4272 Q67040-S4273 Symbol VCE IC Value 1200 16.5 7.9 Unit V A ICpul s VGE EAS tSC Ptot 27 27 ±20 40 10 125 V mJ µs W VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C 1) Al
Datasheet
5
SGB10N60A

Infineon Technologies AG
Fast IGBT
= 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature (reflow soldering MSL1) Symbol VCE IC ICpuls VGE EAS tSC Ptot Tj , Tstg Value Unit 600 V A 20 10.6 40 40 ±20 V 70 m
Datasheet



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