| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies AG |
IPP15N03L • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 12.6 42 P- TO220 -3-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating t |
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Infineon Technologies AG |
IPP10N03L • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 8.9 73 P- TO220 -3-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating te |
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Infineon Technologies AG |
Power-Transistor • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Av |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated P-TO263-3-2 Product |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C ope |
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Infineon Technologies AG |
OptiMOS Buck converter series • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 3.9 80 P- TO220 -3-1 V mΩ A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated P-TO263-3-2 Product |
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Infineon Technologies AG |
OptiMOS Buck converter series • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 4.9 80 P- TO220 -3-1 V mΩ A • Logic Level • Very low on-resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operati |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C oper |
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Infineon Technologies AG |
OptiMOS Buck converter series •N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 5.9 80 P- TO220 -3-1 V mΩ A •Logic Level •Low On-Resistance R DS(on) •Excellent Gate Charge x RDS(on) product (FOM) •Superior thermal resistance •175°C operating tempera |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C o |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor |
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Infineon Technologies AG |
N-Channel MOSFET • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 12.6 42 P- TO220 -3-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating t |
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Infineon Technologies AG |
Power-Transistor • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • N-channel, normal level • Avalanche rated • Qualified according to JEDEC1) for target applications • Pb-free plating |
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Infineon Technologies AG |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant, halogen free • Qualifie |
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Infineon Technologies AG |
Power Transistor |
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Infineon Technologies AG |
OptiMOS Buck converter series • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 8.9 73 P- TO220 -3-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating te |
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