| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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Infineon Technologies AG |
2nd Generation thinQ SiC Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compl |
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Infineon Technologies AG |
2nd Generation thinQ SiC Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs comp |
|
|
|
|
Infineon Technologies AG |
2nd Generation thinQ SiC Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compl |
|
|
|
|
Infineon Technologies AG |
2nd Generation thinQ SiC Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compl |
|