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Infineon Technologies AG |
Ultra-Low Capacitance TVS Diode rking P 1 2009-06-18 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ESD5V0H1U-02LS Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol VESD T op T stg Value Unit ESD contact discharge1) Operating temperatur |
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Infineon Technologies AG |
Transient Voltage Suppressor Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon Technologies AG |
Low Capacitance TVS Diode ss otherwise specified Parameter Symbol VESD I pp T op T stg Value Unit ESD (air / contact) discharge 1) Peak pulse current (tp = 8 / 20 µs)2) Operating temperature range Storage temperature 30 6 -55...125 -65...150 kV A °C Electrical Characteris |
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Infineon Technologies |
Transient Voltage Suppressor Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1.2 Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon Technologies AG |
Ultra-Low Capacitance ESD Diode Array ings at TA = 25°C, unless otherwise specified Parameter Symbol ESD contact discharge1) Peak pulse current (tp = 8 / 20 µs)2) Peak pulse power (tp = 8 / 20 µs)2) VESD Ipp Ppk Operating temperature range Top Storage temperature Tstg Value 15 3 |
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Infineon Technologies AG |
Transient Voltage Suppressor Diodes |
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