| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies AG |
GPS Low Noise Amplifier echnologies SiGe MMIC 0HDVXUHG &LUFXLW 3HUIRUPDQFH All presented measurement values include losses of both PCB and connectors - in other words, the reference planes used for measurements are the PCB’s RF SMA connectors. Noise figure and gain results |
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Infineon Technologies AG |
Broad Band High Gain LNA |
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Infineon Technologies AG |
Silicon Germanium Broadband MMIC Amplifier • Cascadable 50Ω-gain block • 3 dB-bandwidth: DC to 2.8 GHz with 17.0 dB typical gain at 1.0 GHz • Compression point P-1dB = 7 dBm at 2.0 GHz • Noise figure F50Ω = 2.35 dB at 2.0 GHz • Absolute stable • 70 GHz fT - Silicon Germanium technology Applic |
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Infineon Technologies AG |
Silicon Germanium Broadband MMIC Amplifier |
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Infineon Technologies AG |
RF Cascode Amplifier • GMA = 23dB at 900MHz • Ultra high reverse isolation, 62 dB at 900MHz • Low noise figure, F50Ω = 1.3dB at 900MHz • On chip bias circuitry, 5.5 mA bias current at VCC = 3V • Typical supply voltage: 2.5 to 5.0V • SIEGET®-25 technology Applications • B |
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Infineon Technologies AG |
Si-MMIC-Amplifier teristics at TA = 25 °C, unless otherwise specified. Parameter AC characteristics VD = 3 V, Zo = 50 Device current Insertion power gain f = 0.1 GHz f = 1 GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz I |
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Infineon Technologies AG |
Si-MMIC-Amplifier ote Thermal Resistance 1 Aug-02-2001 BGA427 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. AC characteristics VD = 3 V, Zo = 50, Testfixture Appl.1 Insertion power gain |S21|2 f = 0.1 GHz f = 1 |
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Infineon Technologies AG |
Gain and PCS Low Noise Amplifier • • • • • • • High gain, GMA=20dB at 1.8GHz Low noise figure, NF=1.4dB at 1.8GHz Prematched Ideal for GSM, DCS1800, PCS1900 Open collector output Typical supply voltage: 2.4-3V SIEGET®-45 technology 4 5 6 2 1 3 VPS05604 Tape loading orientation |
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Infineon Technologies AG |
Silicon Germanium Broadband MMIC Amplifier |
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Infineon Technologies AG |
The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier • Easy-to-use LNA MMIC in 70 GHz ft SiGe technology • Tiny „Green“ P-TSLP-7-1 package (no Lead or Halogen compounds) • Low external component count • Integrated output DC blocking capacitor, integrated RF choke on internal bias network • Three gain s |
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Infineon Technologies AG |
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC • Versatile, easy-to-use LNA MMIC in 70 GHz ft SiGe technology 3 • 50 Ω matched output, pre-matched input • Integrated output DC blocking capacitor, 4 integrated RF choke on internal bias network • Low current consumption of 6 mA SOT-343 • “Shutdown” |
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