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Infineon Technologies AG |
Silicon Variable Capacitance Diode 1 0.18 200 330 47.5 - pF Capacitance ratio VR = 2 V, VR = 8 V, f = 1 MHz Series resistance VR = 2 V, f = 100 MHz Figure of merit f = 100 MHz, VR = 2 V Temperature coefficient of diode capacitance VR = 2 V, f = 1 MHz 1 ppm/K Capacitance gro |
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Infineon Technologies AG |
Silicon Tuning Diodes = 1 V, f = 470 MHz 1For details please refer to Application Note 047. 2 Nov-07-2002 BB833... Diode capacitance CT = (VR) f = 1MHz BB 833 EHD07121 Temperature coefficient of the diode capacitance TCc = (VR ) 10 -3 12 CT pF 10 1/°C TCc 1 |
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Infineon Technologies AG |
Silicon Tuning Diode 5 0.65 0.45 0.52 - Capacitance ratio VR = 1 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching1) VR = 1V ... 28V, f = 1 MHz, 7 diodes sequence CT1/CT25 10.2 CT1/CT28 9.7 ∆CT/CT - 12 12.7 - 5 Series r |
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Infineon Technologies AG |
Silicon Tuning Diode 5 0.65 0.45 0.52 - Capacitance ratio VR = 1 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching1) VR = 1V ... 28V, f = 1 MHz, 7 diodes sequence CT1/CT25 10.2 CT1/CT28 9.7 ∆CT/CT - 12 12.7 - 5 Series r |
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Infineon Technologies AG |
Silicon Variable Capacitance Diodes 19.1 44.75 20.8 2.15 0.18 200 46.5 22.7 2.25 3 % Capacitance ratio VR = 2 V, VR = 8 V, f = 1 MHz CT2 /CT8 2.05 - Capacitance matching2) VR = 2 V, VR = 8 V, f = 1 MHz CT/CT rS Q Series resistance VR = 2 V, f = 100 MHz Q factor f = 100 MHz, |
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Infineon Technologies AG |
Silicon Variable Capacitance Diodes 1For details please refer to Application Note 047. 2 Nov-07-2002 BB831... Diode capacitance CT = (VR) f = 1MHz BB 811 EHD07053 Temperature coefficient of the diode capacitance TCc = (VR ) 10 -3 12 CT pF 10 1/°C 8 TC C 10 -4 10 -5 0 10 |
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Infineon Technologies AG |
Silicon Variable Capacitance Diode V, f = 1 MHz VR = 8 V, f = 1 MHz CT Unit max. nA 20 200 typ. - IR - pF 42.5 25 10 43.75 27 11.5 3.8 0.28 45 29 13 1.5 % Capacitance ratio VR = 2 V, VR = 8 V, f = 1 MHz CT2 /CT8 3.2 - Capacitance matching1) VR = 2V to 8V , f = 1 MHz CT/CT |
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Infineon Technologies AG |
Silicon Tuning Diode 28 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz 1For Unit max. nA typ. IR 10 200 CT 8 0.5 0.45 CT1 /CT25 CT1 /CT28 CT/CT pF 8.7 0.55 0.52 15.8 16.7 2.8 9.4 0.6 5 % 14 - - rS details please refer to Application Note 047 2 Nov-14- |
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