Infineon Technologies AG BAW fiche technique

No.	Partie #	Fabricant	Description
1	BAW101	Infineon Technologies AG	Silicon Switching Diode
2	BAW56	Infineon Technologies AG	Silicon Switching Diode ameter Junction - soldering point1) BAW56 BAW56S BAW56U BAW56W Ptot Tj Tstg Symbol RthJS 330 250 250 250 150 -65 ... 150 Value 360 260 240 190 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit V mA A mW °C Unit K/
3	BAW78B	Infineon Technologies AG	Silicon Switching Diodes BAW78B BAW78C BAW78D Forward voltage IF = 1 A IF = 2 A Reverse current VR = VRmax Reverse current VR = VRmax , TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 , measured
4	NWR190	Infineon Technologies AG	CDMA RX BAW-filter for PCS Band • • • • • • • • • Low-loss and high-selectivity Bulk-Acoustic-Wave Filter Passband: PCS CDMA Rx 1930 .. 1990 MHz High selectivity and low temperature drift (TCF = -18 ppm/K) Leadless Plastic Package for Surface Mounted Technology (SMT) Thin Small Lea
5	NWT190	Infineon Technologies AG	CDMA TX Full Band BAW-filter for US PCS • • • • • • • • • Low-loss and high-selectivity Bulk-Acoustic-Wave Filter Passband: CDMA Tx 1850 .. 1910 MHz High selectivity and low temperature drift (TCF = -18 ppm/K) Leadless Plastic Package for Surface Mounted Technology (SMT) Thin Small Leadles
6	BAW56S	Infineon Technologies AG	Silicon Switching Diode please refer to Application Note Thermal Resistance 2 Jun-03-2003 BAW56... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics 85 Breakdown voltage V(BR) I(BR) = 100 µA Rev
7	BAW56T	Infineon Technologies AG	Silicon Switching Diode please refer to Application Note Thermal Resistance 2 Jun-03-2003 BAW56... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics 85 Breakdown voltage V(BR) I(BR) = 100 µA Rev
8	BAW56U	Infineon Technologies AG	Silicon Switching Diode please refer to Application Note Thermal Resistance 2 Jun-03-2003 BAW56... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics 85 Breakdown voltage V(BR) I(BR) = 100 µA Rev
9	BAW56W	Infineon Technologies AG	Silicon Switching Diode please refer to Application Note Thermal Resistance 2 Jun-03-2003 BAW56... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics 85 Breakdown voltage V(BR) I(BR) = 100 µA Rev
10	BAW78	Infineon Technologies AG	Silicon Switching Diodes R) = 100 µA Reverse current VR = 400 V VR = 400 V, TA = 150 °C Forward voltage IF = 1 A IF = 2 A AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time I F = 200mA, I R = 200mA, measured at I R = 20mA RL = 100 Test circuit fo
11	BAW78A	Infineon Technologies AG	Silicon Switching Diodes BAW78B BAW78C BAW78D Forward voltage IF = 1 A IF = 2 A Reverse current VR = VRmax Reverse current VR = VRmax , TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 , measured
12	BAW78C	Infineon Technologies AG	Silicon Switching Diodes BAW78B BAW78C BAW78D Forward voltage IF = 1 A IF = 2 A Reverse current VR = VRmax Reverse current VR = VRmax , TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 , measured
13	BAW78D	Infineon Technologies AG	Silicon Switching Diodes R) = 100 µA Reverse current VR = 400 V VR = 400 V, TA = 150 °C Forward voltage IF = 1 A IF = 2 A AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time I F = 200mA, I R = 200mA, measured at I R = 20mA RL = 100 Test circuit fo
14	BAW78D	Infineon Technologies AG	Silicon Switching Diodes R) = 100 µA Reverse current VR = 400 V VR = 400 V, TA = 150 °C Forward voltage IF = 1 A IF = 2 A AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time I F = 200mA, I R = 200mA, measured at I R = 20mA RL = 100 Test circuit fo
15	BAW78M	Infineon Technologies AG	Silicon Switching Diode A, IR = 200 mA, RL = 100 , measured at IR = 20mA trr 1 µs CD 10 pF Symbol min. V(BR) VF IR IR 400 Values typ. max. - Unit V - 1.6 2 1 50 µA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00019 Pulse generator: tp = 10µs,
16	BAW79	Infineon Technologies AG	Silicon Switching Diodes R) = 100 µA Reverse current VR = 400 V VR = 400 V, TA = 150 °C Forward voltage IF = 1 A IF = 2 A AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time I F = 200mA, I R = 200mA, measured at I R = 20mA RL = 100 Test circuit fo
17	BAW79A	Infineon Technologies AG	Silicon Switching Diodes cs Breakdown voltage I(BR) = 100 µA BAW79A BAW79B BAW79C BAW79D Forward voltage IF = 1 A IF = 2 A Reverse current VR = VRmax Reverse current VR = VRmax , TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF =
18	BAW79B	Infineon Technologies AG	Silicon Switching Diodes cs Breakdown voltage I(BR) = 100 µA BAW79A BAW79B BAW79C BAW79D Forward voltage IF = 1 A IF = 2 A Reverse current VR = VRmax Reverse current VR = VRmax , TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF =
19	BAW79C	Infineon Technologies AG	Silicon Switching Diodes cs Breakdown voltage I(BR) = 100 µA BAW79A BAW79B BAW79C BAW79D Forward voltage IF = 1 A IF = 2 A Reverse current VR = VRmax Reverse current VR = VRmax , TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF =
20	BAW79D	Infineon Technologies AG	Silicon Switching Diodes R) = 100 µA Reverse current VR = 400 V VR = 400 V, TA = 150 °C Forward voltage IF = 1 A IF = 2 A AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time I F = 200mA, I R = 200mA, measured at I R = 20mA RL = 100 Test circuit fo