No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies AG |
surface mount RF PIN diode list • Low signal distortion, charge carrier lifetime trr = 1.55 µs (typical) • Very low capacitance C = 0.2 pF (typical) at voltage VR = 0 and frequencies f ≥ 1 GHz • Low forward resistance RF = 2.7 Ω (typical) at forward current IF = 10 mA and freq |
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Infineon Technologies AG |
Silicon PIN Diode R61... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current VR = 50 V VR = 100 V Forward voltage IF = 100 mA IR nA - - 100 - - 1000 VF - 1.05 1.25 |
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Infineon Technologies AG |
Silicon PIN Diodes 02L, TS 118°C BAR63-02V, -02W, BAR63-03W, TS 115°C BAR63-04...BAR63-06, TS BAR63-04S, TS 115°C BAR63-04W...BAR63-06W, TS 105°C BAR63-07L4, TS tbd Junction temperature Operating temperature range Storage temperature Thermal Resistance Par |
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Infineon Technologies AG |
Silicon PIN Diode nce Parameter Junction - soldering point 1) BAR88-02L, 07L4, -099L4 BAR88-02V Symbol RthJS ≤ 65 ≤ 105 Value Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Breakdown volt |
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Infineon Technologies AG |
Silicon PIN Diode nce Parameter Junction - soldering point 1) BAR88-02L, 07L4, -099L4 BAR88-02V Symbol RthJS ≤ 65 ≤ 105 Value Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Breakdown volt |
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Infineon Technologies AG |
Silicon PIN Diodes 55 ... 150 °C Feb-04-2003 BAR50... Thermal Resistance Parameter Symbol RthJS Value Unit Junction - soldering point1) BAR50-02L BAR50-02V BAR50-03W BAR50-05 K/W 80 120 135 360 Electrical Characteristics at TA = 25°C, unless otherwise sp |
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Infineon Technologies AG |
Silicon PIN Diodes 02L, TS 118°C BAR63-02V, -02W, BAR63-03W, TS 115°C BAR63-04...BAR63-06, TS BAR63-04S, TS 115°C BAR63-04W...BAR63-06W, TS 105°C BAR63-07L4, TS tbd Junction temperature Operating temperature range Storage temperature Thermal Resistance Par |
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Infineon Technologies AG |
Silicon PIN Diodes 02L, TS 118°C BAR63-02V, -02W, BAR63-03W, TS 115°C BAR63-04...BAR63-06, TS BAR63-04S, TS 115°C BAR63-04W...BAR63-06W, TS 105°C BAR63-07L4, TS tbd Junction temperature Operating temperature range Storage temperature Thermal Resistance Par |
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Infineon Technologies AG |
Silicon PIN Diode Array = 0 V, f = 100 MHz Zero bias conductance VR = 0 V, f = 100 MHz Forward resistance IF = 5 mA, f = 100 MHz Charge carrier life time RL = 100 IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, rf 1.5 0.7 1.8 gP CT 0.4 0.35 220 0.6 0.9 µs pF Unit max. 20 |
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Infineon Technologies AG |
Silicon PIN Diode nce Parameter Junction - soldering point 1) BAR88-02L, 07L4, -099L4 BAR88-02V Symbol RthJS ≤ 65 ≤ 105 Value Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Breakdown volt |
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Infineon Technologies AG |
Silicon PIN Diode own voltage I(BR) = 5 µA Reverse current VR = 60 V Forward voltage IF = 10 mA IF = 100 mA VF 0.83 0.95 0.9 1.1 V IR 50 nA V(BR) 80 V typ. max. Unit 2 Jul-15-2003 BAR89... Electrical Characteristics at TA = 25°C, unless otherwise specified Paramet |
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Infineon Technologies AG |
Silicon PIN Diodes 55 ... 150 °C Feb-04-2003 BAR50... Thermal Resistance Parameter Symbol RthJS Value Unit Junction - soldering point1) BAR50-02L BAR50-02V BAR50-03W BAR50-05 K/W 80 120 135 360 Electrical Characteristics at TA = 25°C, unless otherwise sp |
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Infineon Technologies AG |
Silicon PIN Diodes 55 ... 150 °C Feb-04-2003 BAR50... Thermal Resistance Parameter Symbol RthJS Value Unit Junction - soldering point1) BAR50-02L BAR50-02V BAR50-03W BAR50-05 K/W 80 120 135 360 Electrical Characteristics at TA = 25°C, unless otherwise sp |
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Infineon Technologies AG |
Silicon PIN Diodes 55 ... 150 °C Feb-04-2003 BAR50... Thermal Resistance Parameter Symbol RthJS Value Unit Junction - soldering point1) BAR50-02L BAR50-02V BAR50-03W BAR50-05 K/W 80 120 135 360 Electrical Characteristics at TA = 25°C, unless otherwise sp |
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Infineon Technologies AG |
Silicon PIN Diodes 55 ... 150 °C Feb-04-2003 BAR50... Thermal Resistance Parameter Symbol RthJS Value Unit Junction - soldering point1) BAR50-02L BAR50-02V BAR50-03W BAR50-05 K/W 80 120 135 360 Electrical Characteristics at TA = 25°C, unless otherwise sp |
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Infineon Technologies AG |
Silicon PIN Diodes 02L, TS 118°C BAR63-02V, -02W, BAR63-03W, TS 115°C BAR63-04...BAR63-06, TS BAR63-04S, TS 115°C BAR63-04W...BAR63-06W, TS 105°C BAR63-07L4, TS tbd Junction temperature Operating temperature range Storage temperature Thermal Resistance Par |
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Infineon Technologies AG |
Silicon PIN Diodes 02L, TS 118°C BAR63-02V, -02W, BAR63-03W, TS 115°C BAR63-04...BAR63-06, TS BAR63-04S, TS 115°C BAR63-04W...BAR63-06W, TS 105°C BAR63-07L4, TS tbd Junction temperature Operating temperature range Storage temperature Thermal Resistance Par |
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Infineon Technologies AG |
Silicon PIN Diodes 02L, TS 118°C BAR63-02V, -02W, BAR63-03W, TS 115°C BAR63-04...BAR63-06, TS BAR63-04S, TS 115°C BAR63-04W...BAR63-06W, TS 105°C BAR63-07L4, TS tbd Junction temperature Operating temperature range Storage temperature Thermal Resistance Par |
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Infineon Technologies AG |
Silicon PIN Diodes 02L, TS 118°C BAR63-02V, -02W, BAR63-03W, TS 115°C BAR63-04...BAR63-06, TS BAR63-04S, TS 115°C BAR63-04W...BAR63-06W, TS 105°C BAR63-07L4, TS tbd Junction temperature Operating temperature range Storage temperature Thermal Resistance Par |
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Infineon Technologies AG |
Silicon PIN Diodes 02L, TS 118°C BAR63-02V, -02W, BAR63-03W, TS 115°C BAR63-04...BAR63-06, TS BAR63-04S, TS 115°C BAR63-04W...BAR63-06W, TS 105°C BAR63-07L4, TS tbd Junction temperature Operating temperature range Storage temperature Thermal Resistance Par |
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