| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies AG |
Fast IGBT mited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150C Power dissipa |
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Infineon Technologies AG |
IPP10N03L • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 8.9 73 P- TO220 -3-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating te |
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Infineon Technologies AG |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • High current capability • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target a |
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Infineon Technologies AG |
Fast IGBT °C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Solder |
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Infineon Technologies AG |
Fast IGBT mited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150C Power dissipa |
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Infineon Technologies AG |
Fast IGBT in NPT-technology stg -55...+150 °C 1) VCE 600V IC 10A VCE(sat) 2.3V Tj 150°C Package TO-220AB TO-263AB TO-247AC Ordering Code Q67040-S4457 Q67040-S4507 Q67040-S4510 Symbol VCE IC Value 600 20 10.6 Unit V A ICpul s VGE EAS 40 40 ±20 70 V mJ tSC Ptot 10 92 |
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Infineon Technologies AG |
Fast IGBT in NPT-technology stg -55...+150 °C 1) VCE 600V IC 10A VCE(sat) 2.3V Tj 150°C Package TO-220AB TO-263AB TO-247AC Ordering Code Q67040-S4457 Q67040-S4507 Q67040-S4510 Symbol VCE IC Value 600 20 10.6 Unit V A ICpul s VGE EAS 40 40 ±20 70 V mJ tSC Ptot 10 92 |
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Infineon Technologies AG |
Fast IGBT in NPT-technology stg -55...+150 °C 1) VCE 600V IC 10A VCE(sat) 2.3V Tj 150°C Package TO-220AB TO-263AB TO-247AC Ordering Code Q67040-S4457 Q67040-S4507 Q67040-S4510 Symbol VCE IC Value 600 20 10.6 Unit V A ICpul s VGE EAS 40 40 ±20 70 V mJ tSC Ptot 10 92 |
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Infineon Technologies AG |
Smart Lowside Power Switch |
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Infineon Technologies AG |
Fast IGBT = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature (reflow soldering MSL1) Symbol VCE IC ICpuls VGE EAS tSC Ptot Tj , Tstg Value Unit 600 V A 20 10.6 40 40 ±20 V 70 m |
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Infineon Technologies AG |
OptiMOS Buck converter series • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 8.9 73 P- TO220 -3-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating te |
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Infineon Technologies AG |
OptiMOS Buck converter series • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 8.9 73 P- TO220 -3-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating te |
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