| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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Infineon Technologies |
MOSFET • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stage |
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Infineon Technologies |
MOSFET & # F/ 23 H E #F/ 2 3 H E #F/ # 91 E (2 0 V 0 E #F/ # 3951 $1 A "& 2 ( Y HE #F/ & > 8 A, ! = ' 8 , ;,; E Z# & 1 G8 J 8 A, ! C& 08 ; %G 1 8 8 + 1 8 1G ; G 8 ; Q # && && ' " 11 ; [ ; % ; 1 11 ; [ ; % A & T\]H T\]O %8 + - G B % |
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Infineon Technologies |
MOSFET • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stage |
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